1976
DOI: 10.1002/pssa.2210340161
|View full text |Cite
|
Sign up to set email alerts
|

Alternating current investigation of copper phthalocyanine films in the presence of blocking contacts

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

1
1
0

Year Published

1980
1980
2005
2005

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 21 publications
(2 citation statements)
references
References 4 publications
1
1
0
Order By: Relevance
“…30 We consider that this mechanism is likely to operate in CuPc thin films as well because the main Such ions can act as charged defects. Further, the dielectric constant is 3.6 for dispersed CuPc thin films having T 0 ϭ500 K and 3.2 for evaporated CuPc thin films 26 having T 0 ϭ590 K consistent with the above theoretical prediction. In addition, the localized-state distribution with the inflection point as shown in Fig.…”
Section: Resultssupporting
confidence: 83%
See 1 more Smart Citation
“…30 We consider that this mechanism is likely to operate in CuPc thin films as well because the main Such ions can act as charged defects. Further, the dielectric constant is 3.6 for dispersed CuPc thin films having T 0 ϭ500 K and 3.2 for evaporated CuPc thin films 26 having T 0 ϭ590 K consistent with the above theoretical prediction. In addition, the localized-state distribution with the inflection point as shown in Fig.…”
Section: Resultssupporting
confidence: 83%
“…The trapping level of 0.54 eV similar to that observed here, obtained by dielectric measurement, has been reported in Al/CuPc/Al sample structure. 26 The frequency scale in Fig. 4 is converted to the energy scale, shown as the upper scale in Fig.…”
Section: Resultsmentioning
confidence: 99%