Measurements are made of space‐charge limited currents (SCLC) and thermostimulated conductivity (TSC) in sublimated layers of phthalocyanine. From an analysis of SCLC current‐voltage characteristics on the basis of the SCLC theory for an exponential trap distribution in the forbidden gap, the characteristic temperature Tc of the distribution, and also the concentration of hole traps (≈ 1017 cm−3) are determined. By measurements of the temperature dependences of SCLC and TSC the presence of discrete trap levels 0.4 and 0.1 eV above the top of the valence band is detected.
Parameters of charge carrier traps in films of the organic semiconductor rhodamine 6G were determined as a result of investigations on thermostimulated conductivity, isothermal decay of TSC, and distant stages of photocurrent relaxation. The traps are located in the forbidden band at a depth of 0.32 eV and are practically discrete. The depth of the traps was determined by eleven various methods. Coincident values were obtained in all cases, where fast retrapping had been anticipated. The availability of retrapping is confirmed by the data on isothermal decrease of TSC — the time of trapping is one order of magnitude less than the lifetime of carriers.
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