The platform will undergo maintenance on Sep 14 at about 7:45 AM EST and will be unavailable for approximately 2 hours.
2012
DOI: 10.1016/j.apsusc.2012.03.043
|View full text |Cite
|
Sign up to set email alerts
|

Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
28
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 53 publications
(29 citation statements)
references
References 29 publications
1
28
0
Order By: Relevance
“…It should be noted that quenching the visible emission as well as its red-shift as a result of Mn doping were earlier observed in ZnO ceramics, films and nanostructures [1][2][3][4][5][6] and were often ascribed to redistribution of green and orange PL bands intensities due to suppression of self-activated green emission [2][3][4][5][6]. This suppression was accounted for by the decrease of concentrations of zinc interstitials Zn i and/or oxygen vacancies V O as a result of Mn incorporation [2][3][4][5]13].…”
Section: Resultsmentioning
confidence: 99%
See 4 more Smart Citations
“…It should be noted that quenching the visible emission as well as its red-shift as a result of Mn doping were earlier observed in ZnO ceramics, films and nanostructures [1][2][3][4][5][6] and were often ascribed to redistribution of green and orange PL bands intensities due to suppression of self-activated green emission [2][3][4][5][6]. This suppression was accounted for by the decrease of concentrations of zinc interstitials Zn i and/or oxygen vacancies V O as a result of Mn incorporation [2][3][4][5]13].…”
Section: Resultsmentioning
confidence: 99%
“…This suppression was accounted for by the decrease of concentrations of zinc interstitials Zn i and/or oxygen vacancies V O as a result of Mn incorporation [2][3][4][5]13]. However, it is known that, in addition to self-activated green band peaked at about 2.40 eV (510-520 nm) [14][15][16], another one peaked at about 2.30 eV (530-540 nm) and related to residual Cu impurity is usually present in PL spectrum of intentionally undoped ZnO [14][15][16].…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations