AlN avalanche photodetectors

Dahal, R.; Tahtamouni, T. M. Al; Lin, J. Y.; Jiang, Hongxing

doi:10.1063/1.2823588

Cited by 46 publications

(39 citation statements)

References 26 publications

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“…7 A crucial problem, common to many wide band gap semiconductors, is how to achieve effective n-and p-doping. In the case of AlN, while p-type doping is still challenging, Si doping produces n-type conductivity at room temperature.…”

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confidence: 99%

Hybrid functional study of Si and O donors in wurtzite AlN

Silvestri

Dunn²,

Prawer

et al. 2011

Applied Physics Letters

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The properties of Si and O donors in wurtzite AlN have been studied by means of hybrid functional calculations, finding that both impurities form DX centres. In the case of Si, the stable DX centre is close in energy to the substitutional donor state and to a second metastable DX centre, thus explaining both the persistent effects and the broad range of activation energies observed experimentally. Ionisation energies have been computed for both Si and O donor states.

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confidence: 99%

Hybrid functional study of Si and O donors in wurtzite AlN

Silvestri

Dunn²,

Prawer

et al. 2011

Applied Physics Letters

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“…2͒ and detectors in the deep ultraviolet ͑DUV͒ and extreme UV spectral region. 3,4 Quantum wells ͑QWs͒ have been the device structure of choice for efficient III-nitride semiconductor based light emitters. 5,6 Conventional nitride c-plane multiple QW structures generate fixed sheet charges at the interfaces due to the spontaneous and piezoelectric polarization.…”

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confidence: 99%

Photoluminescence properties of AlN homoepilayers with different orientations

Sedhain

Nepal

Nakarmi

et al. 2008

Applied Physics Letters

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AlN homoepilayers and heteroepilayers were grown on polar c-plane and nonpolar a-plane and m-plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers ͑c, a and m planes͒ were strain free with an identical band gap of about 6.099 ͑6.035͒ eV at 10 ͑300͒ K, which is about 42 meV below the band gap of c-plane AlN heteroepilayers grown on sapphire. Also, nonpolar a-plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a-plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2965613͔ AlN has a complete solid solubility with GaN ͑Ref. 1͒ and emerged as an important semiconductor material for applications of light emitters down to 200 nm ͑Ref. 2͒ and detectors in the deep ultraviolet ͑DUV͒ and extreme UV spectral region. 3,4 Quantum wells ͑QWs͒ have been the device structure of choice for efficient III-nitride semiconductor based light emitters. 5,6 Conventional nitride c-plane multiple QW structures generate fixed sheet charges at the interfaces due to the spontaneous and piezoelectric polarization. 7-10 which induce internal electric fields, lead to carrier separation, and reduce the radiative recombination rate. Consequently, optoelectronic devices such as light emitting diodes and laser diodes based on heteroepitaxial c-plane oriented III-nitride materials possess reduced internal quantum efficiencies.There has been tremendous effort in the investigation of nonpolar a-plane and m-plane III-nitride epilayers 11 and optoelectronic devices with QW structures 9,10 to reduce the effects of internal electric fields. To achieve QW and other heterostructure based devices with improved performance, optical properties of epilayers grown on different orientations of available substrates have to be better understood. Furthermore, most previous studies on the fundamental band structures of AlN have been carried out for heteroepilayers grown on sapphires, which are plagued by lattice mismatch induced strain and high threading dislocation density, which significantly inhibited our ability for precisely determining the fundamental band structure parameters of AlN. In this work, we report a systematic comparative study of optical properties of both homoepitaxial and heteroepitaxial layers of AlN grown on polar c-plane as well as a-plane and m-plane orientations probed by DUV photoluminescence ͑PL͒.AlN bulk single crystal substrates were produced by sublimation crystal growth using polycrystalline AlN wafer as seeds and have a thickness of about 1 mm and an average grain size of about 2 ϫ 3 mm 2 . 12 The surface of AlN bulk crystal substrates was prepared by chemical mechanical polishing ͑done by NovaSiC͒ that provided a surface roughness of about 1 -4 nm. The dislocation density i...

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“…However, III-Nitride APDs have been handicapped by the material defect density, which has resulted in micro-plasma-induced premature breakdown or high dark current at high reverse bias voltage. [6][7][8] With the availability of free standing GaN substrates, the dark current performance of GaN APDs has improved significantly. However, state-of-theart dark current levels are still more than 3 orders of magnitude higher than those of SiC APDs near breakdown.…”

Section: Gan/sic Avalanche Photodiodesmentioning

confidence: 99%