AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN

Mitsunari, Tadashi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, M.; Amano, Hiroshi

doi:10.1016/j.jcrysgro.2012.09.062

Cited by 13 publications

(11 citation statements)

References 9 publications

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“…Recently, a newly developed technology employing the thermal decomposition of GaN has shown great potential for the fabrication of nitride air-gap nanostructures. 22,23 This technique, based on a dry process, is easier and faster, allowing the fabrication of complicated multilayer structures.…”

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confidence: 99%

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Tao

Arita

Kako

et al. 2013

Applied Physics Letters

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Using the thermal decomposition technique, non-polar III-nitride air-gap distributed Bragg reflector (DBR) microcavities (MCs) with a single quantum well have been fabricated. Atomic force microscopy reveals a locally smooth DBR surface, and room-temperature micro-photoluminescence measurements show cavity modes. There are two modes per cavity due to optical birefringence in the non-polar MCs, and a systematic cavity mode shift with cavity thickness was also observed. Although the structures consist of only 3 periods (top) and 4 periods (bottom), a quality factor of 1600 (very close to the theoretical value of 2100) reveals the high quality of the air-gap DBR MCs.

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mentioning

confidence: 99%

Fabrication and optical properties of non-polar III-nitride air-gap distributed Bragg reflector microcavities

Tao

Arita

Kako

et al. 2013

Applied Physics Letters

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“…However, sublimation is sensitive to structural defects 64 , occurs not only vertically but also laterally, and is only suitable for GaN and InGaN materials; not AlGaN with more than 10% Al 65 . Therefore, although promising for photonic applications and the nanostructuring of GaN materials 62,63,65,66 , ICP dry etching provides more flexibility on the type of materials that can be patterned and on the nanostructure profile.…”

Section: Resultsmentioning

confidence: 99%

Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

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“…Recently, air-gap/GaN DBR structures with a large refractive index difference and high reectivity have been reported through selective anodization processes [12][13][14] and thermal decomposition techniques. 15,16 But the low mechanical strength and the tiny highly reective area of the air-gap/GaN DBR structure remain a challenge for the photonic device fabrication. Y 2 O 3 /Si, 17 Gd 2 O 3 /Si, 18 AlN/GaN, 19 and AlN/AlGaN 20 DBR structures had been reported for GaN-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%