1999
DOI: 10.1023/a:1019028522765
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Cited by 32 publications
(6 citation statements)
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“… 12 , 13 Also, materials with ordered mesoporous pore structures such as MCM-41 and KIT-1 have been investigated. 14 However, as for the catalysts mentioned above, either their selectivities are not high or their stabilities are poor. Compared with most amorphous and mesoporous catalysts, zeolite can trigger the skeletal isomerization reaction of 1-butene to isobutene at a lower reaction temperature.…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation
“… 12 , 13 Also, materials with ordered mesoporous pore structures such as MCM-41 and KIT-1 have been investigated. 14 However, as for the catalysts mentioned above, either their selectivities are not high or their stabilities are poor. Compared with most amorphous and mesoporous catalysts, zeolite can trigger the skeletal isomerization reaction of 1-butene to isobutene at a lower reaction temperature.…”
Section: Introductionmentioning
confidence: 98%
“…Houžvička et al and Gao and Moffat prepared catalysts possessing isomerization activities by loading phosphoric acid and 12-tungstophosphoric acid onto silica, respectively. In addition, halogen-modified alumina catalysts can also induce the skeletal isomerization reaction of 1-butene. , Also, materials with ordered mesoporous pore structures such as MCM-41 and KIT-1 have been investigated . However, as for the catalysts mentioned above, either their selectivities are not high or their stabilities are poor.…”
Section: Introductionmentioning
confidence: 99%
“…The presence and type of acid sites, their acid strength, the density and their distribution have been evaluated to understand the catalytic performance of ferrierite in the butene isomerization reaction [3]. The characteristic behavior of this zeolite is a high conversion with low isobutene selectivity at a short time-on-stream, being it associated with the presence of strong acid sites [4].…”
Section: Introductionmentioning
confidence: 99%
“…However, it inevitably induces defects on the wafer surface, including those triggered by microscratches caused by poor dispersion of ceria particles and insufficient repulsive forces between the abrasives and film surface. [3][4][5] These defects can induce a leakage current or a short between gates. 6 Therefore, defects on the wafer surface are a crucial issue in the STI CMP process.…”
mentioning
confidence: 99%