Almost seamless joining of SiC using an in-situ reaction transition phase of Y3Si2C2

Zhou, Xiaobing; Liu, Junwen; Zou, Shunrui; Xu, Kai; Chang, Keke; Huang, Feng; Huang, Zhengren; Huang, Qing

doi:10.1016/j.jeurceramsoc.2019.10.016

Cited by 32 publications

(16 citation statements)

References 35 publications

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“…Most importantly, Y 3 Si 2 C 2 can decompose to SiC and Y 2 O 3 (might act as the sintering additives for SiC) at ~1600 . ℃ Therefore, Y 3 Si 2 C 2 was also successfully used as a transition phase to achieve the seamless joining of SiC ceramics [11]. The joining mechanism was identified as follows: First, the laminated Y 3 Si 2 C 2 structure was formed by the in situ reaction between Y coatings with a thickness of 500 nm and SiC matrix in the joining layer at 1400 ℃.…”

Section: Introduction mentioning

confidence: 99%

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

et al. 2021

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A nano-laminated Y3Si2C2 ceramic material was successfully synthesized via an in situ reaction between YH2 and SiC using spark plasma sintering technology. A MAX phase-like ternary layered structure of Y3Si2C2 was observed at the atomic-scale by high resolution transmission electron microscopy. The lattice parameters calculated from both X-ray diffraction and selected area electron diffraction patterns are in good agreement with the reported theoretical results. The nano-laminated fracture of kink boundaries, delamination, and slipping were observed at the tip of the Vickers indents. The elastic modulus and Vickers hardness of Y3Si2C2 ceramics (with 5.5 wt% Y2O3) sintered at 1500 °C were 156 and 6.4 GPa, respectively. The corresponding values of thermal and electrical conductivity were 13.7 W·m-1·K-1 and 6.3×105 S·m-1, respectively.

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Section: Introduction mentioning

confidence: 99%

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

et al. 2021

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“…Various joining techniques have been utilized to join refractory ceramics, including UHTCs such as brazing, 6–9 reaction joining, 10,11 solid diffusion bonding, 12,13 transient eutectic bonding 14 . Among these, diffusion bonding is the technique that employs solid‐state diffusion of atoms as the primary process for the development of the joint.…”

Section: Introductionmentioning

confidence: 99%

“…Lately, SPS has also been used as an innovative technology for joining similar and dissimilar materials with short holding times (a few minutes), thereby overcoming the drawback of traditional diffusion joining 11,15–19 …”

Section: Introductionmentioning

confidence: 99%

Electric field assisted solid‐state interfacial joining of TaC‐HfC ceramics without filler

et al. 2021

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The application of ultra‐high‐temperature ceramics (UHTCs) demands effective ways of joining in overcoming the problems associated with the fabrication of complex‐shaped components. In this study, we choose to investigate a new method of rapidly joining pre‐sintered TaC and HfC ceramics without any filler material using the spark plasma sintering (SPS) technique. A well‐bonded TaC–HfC interface was observed with no apparent cracking and porosity at the joint. The joining mechanisms were predominantly driven by solid‐state diffusion and localized plastic deformation. The nanomechanical properties of the TaC‐HfC joint are better than the HfC while comparable to that of the TaC. High‐load indentation (up to 200 N) results suggest that the TaC–HfC interface is stronger than the parent UHTCs with no crack propagating at the interface. Upon comparison with the parent UHTCs, the damaged area and the average crack length at the interface, reduced up to ~94% and ~56%, respectively. This study shows that the SPS technique can also apply to joining other UHTCs without any filler, resulting in the new field of developing complex components for the thermal protection system (TPS).

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“…However, an appropriate joining technique needs to be developed to assemble SiC w /Ti 3 SiC 2 composites as large components in complex shapes. A joining layer material is usually needed for the joining of ceramics, such as SiC‐based ceramics, as well as MAX phases 33–39 . Moreover, the joining layer is usually the weakest part of a ceramic joint in extreme environments.…”

Section: Introductionmentioning

confidence: 99%

Fast seamless joining of SiC_w/Ti₃SiC₂ composite using electric field‐assisted sintering technique

Zhou

Shi

Zou

et al. 2021

Int J Applied Ceramic Tech

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A pair of Ti3SiC2 reinforced with SiC whiskers (SiCw/Ti3SiC2) composites was successfully joined without any joining materials using electric field‐assisted sintering technology at a temperature as low as 1090°C (Ti) and a short time of 30 s. The microstructure and mechanical properties of the obtained SiCw/Ti3SiC2 joints were investigated. The solid‐state diffusion was the main joining mechanism, which was facilitated by a relatively high current density (~586 A/cm2) at the joining interface. The shear strength of the sample joined at 1090°C was 51.8 ± 2.9 MPa. The sample joined at 1090°C failed in the matrix rather than at the interface, which confirmed that a sound inter‐diffusion bonding was obtained. A rapid and high efficient self‐joining process may find application in the case of SiCw/Ti3SiC2 sealing cladding tube and end cap.

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Almost seamless joining of SiC using an in-situ reaction transition phase of Y3Si2C2

Cited by 32 publications

References 35 publications

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

Electric field assisted solid‐state interfacial joining of TaC‐HfC ceramics without filler

Fast seamless joining of SiC_w/Ti₃SiC₂ composite using electric field‐assisted sintering technique

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Almost seamless joining of SiC using an in-situ reaction transition phase of Y3Si2C2

Cited by 32 publications

References 35 publications

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

Electric field assisted solid‐state interfacial joining of TaC‐HfC ceramics without filler

Fast seamless joining of SiCw/Ti3SiC2 composite using electric field‐assisted sintering technique

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Fast seamless joining of SiC_w/Ti₃SiC₂ composite using electric field‐assisted sintering technique