2022
DOI: 10.1016/j.optmat.2022.113154
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Alloy engineering in InxSn1-xS for enhanced photodetection application

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Cited by 17 publications
(4 citation statements)
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“…The best photodetector performance was achieved for 7% In doped SnS. The large responsivity of 85 A/W and detectivity of 8.96 × 10 10 Jones were determined for this photodetector at 1 V bias voltage under illumination intensity of 6.96 mW/m 2 49 .…”
Section: Introductionmentioning
confidence: 92%
See 1 more Smart Citation
“…The best photodetector performance was achieved for 7% In doped SnS. The large responsivity of 85 A/W and detectivity of 8.96 × 10 10 Jones were determined for this photodetector at 1 V bias voltage under illumination intensity of 6.96 mW/m 2 49 .…”
Section: Introductionmentioning
confidence: 92%
“…Its responsivity reached 17.78 mA/W under 5 V bias voltage, which was equivalent to previous two-dimensional transition metal dichalcogenides photodetectors on rigid substrates. In another work, Modi et al 49 employed straightforward hydrothermal method to synthesize indium-doped SnS ternary alloys. The best photodetector performance was achieved for 7% In doped SnS.…”
Section: Introductionmentioning
confidence: 99%
“…The demand for highly effective, sensitive, broadband, large-area flexible, and wearable-type photodetectors has grown significantly in the current era of rapid technological development. These photodetectors are essential in a variety of applications, including optical communication, environmental monitoring, astronomical observations, military applications, image sensing, and biomedical imaging. Owing to developments in material science, nanotechnology, and device engineering, photodetectors have seen substantial advances in recent years in terms of design, manufacturing, and characterization. Examples include low-dimensional material-based detectors, hybrid organic–inorganic devices, various metal-doped devices, heterostructure-based devices, and integrated photonic structures. Two-dimensional (2D) materials became important after the discovery of graphene. Borophene, Boron nitrides, and MXenes are other examples of the 2D materials family. Owing to its excellent characteristics and optical and electrical properties, two-dimensional (2D) transition-metal chalcogenides (TMC) have recently caught the attention of researchers studying optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9][10][11][12] Transition metal dichalcogenide (TMD) materials like WSe 2 , MoSe 2 , WS 2 , MoS 2 , ReS 2 , and MoTe 2 are types of 2D materials that are frequently employed in photo-detectors due to their high photon absorbance, strong lightmatter interactions, high mobilities, and tuneable bandgap. [13][14][15][16] The expression MX 2 (where M and X represent transition metals (W, Mo, Nb, Ta, etc.) and chalcogenides (S, Se, Te, etc.…”
Section: Introductionmentioning
confidence: 99%