All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Cao, Xun; Li, Xiaomin; Gao, Xiangdong; Liu, Xinjun; Yang, Chan; Yang, Rui; Jin, Ping

doi:10.1088/0022-3727/44/25/255104

Cited by 71 publications

(49 citation statements)

References 32 publications

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“…In addition, ZnO also been employed as a photodetector in the ultraviolet (UV) region of the electromagnetic spectra [10][11][12] as well as in light emitting diodes (LEDs) [13], UV lasers [14], thin films transparent transistors (TFTs) [15], memory devices [16], and transparent conducting oxides for consumer devices [17]. The subject related to the applications of ZnO was boosted with the advantage of the easy synthesis process compared to the other competitive compounds, such as gallium nitride (GaN) and silicon carbide (SiC).…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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In this chapter, we review the application of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored. The lack in the study of the 2D ZnO UV sensors might be due to the difficulties of controlling the growth of the 2D ZnO compared to the one-dimensional (1D) ZnO structures.

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Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Al-Hardan¹,

Hamid²,

RoslindaShamsudin³

et al. 2017

Optoelectronics - Advanced Device Structures

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“…Obtaining favorable endurance properties is one of the major challenges for ZnO-based T-RRAM [7][8][9][10]. It has been suggested that the memory window should achieve the requirement of at least one order of magnitude to allow for small and highly efficient sense amplifiers [11,12].…”

Section: Introductionmentioning

confidence: 99%

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

et al. 2015

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The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 10 4 cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.

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“…Compared with the reported data, 1,[15][16][17][18][19] in addition to the small set/reset voltages, the proposed transparent ITO/ ACG/ITO memories also possess relative good performance in ON/OFF ratio and retention time. 1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented.…”

mentioning

confidence: 82%

“…1,[15][16][17][18][19] A highly transparent ITO/ACG/ITO RRAM has been presented. The Al-chelated gelatin biomaterial memory with a transmittance of 83% at 550 nm, an ON/OFF current ratio of more than 10 5 , bipolar resistive switching, and the set voltage of around À0.5 V can be achieved.…”

mentioning

confidence: 99%

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Chang

Wang

2015

Applied Physics Letters

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Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>105), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

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All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Cited by 71 publications

References 32 publications

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Ultraviolet Sensors Based on Two-Dimensional Zinc Oxide Structures

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

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