“…[ 1,2 ] Such ultracompact high‐power lasers with single‐mode emission and narrow‐beam, low‐divergence angle have ample potential applications, e.g., in materials processing, optical communication, and sensing. The formation of a buried PC layer has been accomplished using wafer fusion, [ 2,3 ] epitaxial regrowth, [ 1,4 ] and transfer printing, [ 5 ] where the most prominent results so far have been obtained using the epitaxial regrowth process with the demonstration of near‐infrared GaAs‐based PCSELs with beam tailoring, [ 6 ] polarization control, [ 7,8 ] beam steering, [ 9 ] and watt‐range continuous‐wave output power. [ 10,11 ] These devices rely on the formation of semiconductor/air PC lattices with high refractive index contrast and strong coupling with the in‐plane 2D optical mode.…”