2013
DOI: 10.1109/jstqe.2013.2249293
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All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

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Cited by 21 publications
(12 citation statements)
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“…Beam steering has also been demonstrated [9]. PCSELs have previously mainly been realized through wafer fusion [2], however there has been a recent growing trend towards epitaxial overgrowth [10][11][12][13][14][15]. Gelleta et.al, [16] recently investigated simulated effects of external feedback on PCSELs.…”
Section: Introductionmentioning
confidence: 99%
“…Beam steering has also been demonstrated [9]. PCSELs have previously mainly been realized through wafer fusion [2], however there has been a recent growing trend towards epitaxial overgrowth [10][11][12][13][14][15]. Gelleta et.al, [16] recently investigated simulated effects of external feedback on PCSELs.…”
Section: Introductionmentioning
confidence: 99%
“…Developments in fabrication and regrowth technologies have allowed a significant improvement over our previous work [10], [12].…”
Section: Introductionmentioning
confidence: 91%
“…The hard mask was then removed and regrowth to fill the PC structure, planarise the waveguide, and grow upper p-doped cladding layers was undertaken in an MOVPE reactor. Prior to device fabrication, the MOVPE process was optimized due to the high aspect ratio of the PC features [10]- [12].…”
Section: Pcsel Fabrication and Realisationmentioning
confidence: 99%
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“…[ 1,2 ] Such ultracompact high‐power lasers with single‐mode emission and narrow‐beam, low‐divergence angle have ample potential applications, e.g., in materials processing, optical communication, and sensing. The formation of a buried PC layer has been accomplished using wafer fusion, [ 2,3 ] epitaxial regrowth, [ 1,4 ] and transfer printing, [ 5 ] where the most prominent results so far have been obtained using the epitaxial regrowth process with the demonstration of near‐infrared GaAs‐based PCSELs with beam tailoring, [ 6 ] polarization control, [ 7,8 ] beam steering, [ 9 ] and watt‐range continuous‐wave output power. [ 10,11 ] These devices rely on the formation of semiconductor/air PC lattices with high refractive index contrast and strong coupling with the in‐plane 2D optical mode.…”
Section: Introductionmentioning
confidence: 99%