All-selective MOVPE-grown 1.3-μm strained multi-quantum-well buried-heterostructure laser diodes

Sakata, Y; Hosoda, Takashi; Sasaki, Yoshihiro; Kitamura, Sota; Yamamoto, M.; Inomoto, Y.; Komatsu, K.

doi:10.1109/3.748842

Cited by 27 publications

(8 citation statements)

References 32 publications

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“…PNPN stack layer represents the best solution in terms of temperature performances, even if the high parasitics of the stack should be dramatically reduced (by using trenches) to allow high-speed operation. Additional structures proposed are ACIS Al-Oxide Confined Inner Stripe, RIBPBH Recombination-layerInserted Blocking PBH, and Electron and hole stoppers, with the aim of high temperature -high-speed performances [20,21,22,23,24,25].…”

Section: Active Materials and Structures For High T 0 Devicesmentioning

confidence: 99%

“…Alluminium based Quaternary materials have been indicated as most promising to achieve high temperature and high speed as well. InGaAlAs/ InGaAlAs and InGaAsP/InGaAlAs (usually growth by LO-MOVPE) are the most widely used material systems; theoretical and experimental investigations are reported about high temperature performance optimisations, like band-gap engineering and number of wells, demonstrating T 0 up to 120 K [5,6,7,8,9]. Extremely promising are also the ternary-ternary and ternary-quaternary systems, such as InAsP/InGaAsP, InAsP/InGaP, InAsP/InGaAlAs, demonstrating T 0 > 100 K, maximum operating temperature > 140 C, good slope efficiency and low slope efficiency decreasing versus temperature, and also very low threshold currents (6 mA at 100 °C [10,11,12,13].…”

Section: Active Materials and Structures For High T 0 Devicesmentioning

confidence: 99%

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Uncooled high-speed DFB lasers for gigabit ethernet applications

Paoletti

Meliga

2002

SPIE Proceedings

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Uncooled DFB lasers directly modulated at 10 Gbit/s are a key devices for Optical communication systems operating at 10 Gbit/s, such as 10 Gbit Ethernet, since their effective use in optical transceivers to reduce cost, size and power consumption. The paper describe the current status of these sources (including well assessed InGaAsP MQW and recent progress for AlGaInAs MQW active layers), as well as the Agilent's very recent results. Combining an optimised active region based on InGaAsP strained MQW (Multi Quantum Well) and a low parasitic lateral confinement region, we have fabricated 10 Gb directly modulated uncooled DFB lasers which represent, we believe, the state of art. Our DFB lasers work up to 100 °C (chip temperature), with eye diagram perfectly open (showing an extinction ratio > 5 dB), and with Bit Error Rate over 10 km without error floor. Up to 90 °C our DFBs show threshold current as low as 29 mA, optical power as high as 13 mW and meet perfectly 10 Gb scaled Ethernet mask with extinction ratio > 6 dB

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Section: Active Materials and Structures For High T 0 Devicesmentioning

confidence: 99%

Section: Active Materials and Structures For High T 0 Devicesmentioning

confidence: 99%

Uncooled high-speed DFB lasers for gigabit ethernet applications

Paoletti

Meliga

2002

SPIE Proceedings

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“…In this section, the influence of pulse-mode selective MOVPE, which is very useful in improving the crystal quality due to the enhanced migration effect, 8,11 upon the migration length is discussed. Pulsemode epitaxy means that the group-III source of TMIn is intermittently supplied while the group-V source of PH 3 is continuously supplied.…”

Section: Growth Sequence Dependencementioning

confidence: 99%

“…Furthermore, narrow-stripe selective (NS) MOVPE (such as 0.5-2.0 µm width) can also achieve direct waveguide formation for an ideal optical waveguide structure. [6][7][8] However, it is relatively difficult to attain the completely flat (100) interfaces of selectively grown InGaAsP layers due to their small migration length on the semiconductor surface. Therefore, an ideal waveguide structure can be realized with no semiconductor etching process.…”

Section: Introductionmentioning

confidence: 99%

Migration effect on semiconductor surface for narrow-stripe selective MOVPE

Sakata

Komatsu

2000

Journal of Elec Materi

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“…However, one major difficulty in fabricating monolithic integrated devices is to obtain large bandgap energy shift between the functional elements. More recently, a novel integration method for bandgap energy controlling during simultaneous selective area growth (SAG) process in metal-organic chemical vapor deposition (MOCVD) has received great attention [3][4][5]. Different bandgaps of MQW structures can be easily achieved in a substrate simultaneously by changing the dielectric mask geometry.…”

Section: Introductionmentioning

confidence: 99%