All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

Gomes, Henrique L.; Medeiros, Maria C. R.; Villani, Fulvia; Canudo, Joana; Loffredo, F.; Miscioscia, Riccardo; Martínez‐Domingo, Carme; Ramón, Eloi; Sowade, Enrico; Mitra, Kalyan Yoti; Baumann, Reinhard R.; McCulloch, Iain; Carrabina, Jordi

doi:10.1016/j.microrel.2015.05.006

Cited by 29 publications

(15 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…As mentioned in the Section 2, two different types of devices were printed: one with PFTP deposited on the substrate and one without it. PFTP surface treatment is typically adopted to adjust the work function of the S/D electrodes to improve hole injection in the semiconductor channel but it is also known to reduce charge trapping at the insulator/channel interface and to improve the device stability against bias‐stress .…”

Section: Resultsmentioning

confidence: 99%

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Borriello

Miscioscia

Mansour

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this work, FETs are used as a research tool to study charge carrier mobilities in PbS nanocrystals (NCs) thin‐films employed as semiconducting layer in bottom‐gate bottom‐contact (BGBC) field‐effect transistors (FETs). The as‐synthesised NCs are surrounded by long alkyl chain ligands which act as electrical insulators. Therefore, a ligand exchange process with shorter molecules is necessary to enhance the free charges generation and transport. We used two different ligands: 1,2 ethandithiol (EDT) and 1,2,3,4‐tetrabutylammonium iodide (TBAI) and studied the charge mobility of PbS NCs comparing the electrical characteristics of FETs made by exchanged NCs. We analysed also the contemporary presence of both exchanged nanocrystals on the device. All the transistors showed p‐type transport behaviour, enhanced by an annealing process at 100 °C for 10 min. After this, only the TBAI‐treated NCs devices showed a n‐type transport, resulting in an ambipolar behaviour. Inkjet printing deposition techniques was also successfully used to deposit PbS‐(TBAI) NCs and ambipolar devices were obtained. In addition, for printed devices it was found that it is possible to modulate the charge transport properties by applying surface treatment to the substrate with a pentafluorothiophenol (PFTP). Indeed in this case, the p‐type transport was suppressed while n‐type behaviour was induced.

show abstract

Section: Resultsmentioning

confidence: 99%

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Borriello

Miscioscia

Mansour

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Recently, more and more people have been attracted to printed electronics that show great potential in various applications such as radio-frequency identication devices (RFID), 1 photovoltaic cells, 2 light-emitting diodes (LEDs), 3 SERS, 4,5 organic thin lm transistors (OTFT), 6 smart clothing, 7 and sensors. 8 Rapid and costeffective methods for the fabrication of electronics on exible substrates, such as polymers, 9 cloth textiles, 7,10 and paper, 11 are important for the realization of commercially available exible electronics.…”

Section: Introductionmentioning

confidence: 99%

Large-scale and facile synthesis of silver nanoparticles via a microwave method for a conductive pen

et al. 2017

View full text Add to dashboard Cite

show abstract

“…One of the leading advantages of organic electronics is the potential of using additive printing methods to deposit the active materials from solution under ambient conditions at low temperatures. [15][16][17] Conti et al inkjet printed ultrathin dielectric films, 30-50 nm, of crosslinked PVP in transistors by degassing the samples in vacuum prior to curing. [8,9] Engineering dielectric materials is another way of improving OFET characteristics.…”

mentioning

confidence: 99%

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Vaklev

Steinke

Campbell

2019

Adv Materials Inter

View full text Add to dashboard Cite

Dielectrics are a critical element of all electronic devices, being used not only directly in the gate layer of transistors, but also as insulators separating conducting interconnects, as well as passivation/protective layers. Crosslinkable and polymeric organic dielectrics can form large-area, highly uniform, and smooth films, which are highly flexible and solution processable, strong advantages for their use in flexible organic electronics. However, for the most challenging application of the gate dielectric, any material must ideally enable the formation of functional and stable films of thickness > 100 nm. This is driven by two requirements. First, low voltage operation, typically > 5 V, is due to the battery supply in portable applications along with integration of inputs and outputs with silicon based complementary metal-oxide-semiconductor (CMOS) technology. For some biomedical sensors, there is the additional constraint of the electrochemical window of water (1 V). Second, the channel length L to dielectric thickness d ratio required to achieve transistor saturation (typically L/d >> 10) is a requirement for use in digital logic applications. Short channel lengths are needed for high frequency operation, and hence with the resolution limit of conventional photolithography being of order of micrometers, dielectric thickness needs to scale accordingly into the sub-100 nm range.There has been considerable activity toward the development of printed organic field effect transistors (OFETs). Hubler and Ellinger published three reports on fully printed transistors on foil, [3][4][5] where they used only additive techniques such as screen, gravure, and flexographic printing to fabricate piezoelectric loudspeakers based on transistors in a roll-to-roll process. Miniaturization of transistor devices using roll-to-roll compatible methods for fabrication has also been another important trend over the last couple of years. Vilkman et al. demonstrated the complete roll-to-roll manufacturing of self-aligned transistors with 25-70 µm channel lengths. [1] The authors used a combination of flexography, gravure printing, metal evaporation combined with lift-off and photolithography to produce ≈80 m of plastic foil with thousands of devices. Higgins et al. used printing and nanoimprint lithography to fabricate selfaligned transistors and inverters with sub-micrometer channel length in a batch process. [6] The dielectric and semiconductors were deposited with forward gravure and/or inkjet printing. Kang et al. scaled transistor dimensions by gravure printing 10 µm lines for gate electrodes with self-aligned source-drain electrodes. [7] Park et al. reported printing silver electrodes in Organic electronics requires dielectrics which can be processed over large areas at low temperature in ambient using simple solution based techniques. Here a crosslinkable acrylate-based organic dielectric is reported, which is gravure printable on plastic substrates, patternable by conventional photolithography, and can form electrically funct...

show abstract

All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

Cited by 29 publications

References 12 publications

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Influence of ligand exchange on the electrical transport properties of PbS nanocrystals

Large-scale and facile synthesis of silver nanoparticles via a microwave method for a conductive pen

Gravure Printed Ultrathin Dielectric for Low Voltage Flexible Organic Field‐Effect Transistors

Contact Info

Product

Resources

About