All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes

Al-Dirini, Feras; Mohammed, Mahmood; Hossain, Faruque M.; Nirmalathas, Thas; Skafidas, Efstratios

doi:10.1109/jeds.2015.2490178

Cited by 16 publications

(7 citation statements)

References 46 publications

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“…The voltage sensitivity of the device is represented by the value of γ/4 (refer Section 4) [40], and the Noise Equivalent Power (NEP) is defined as the noise power density over the detection sensitivity [23] where it is represented by the minimum detectable power per square root bandwidth (W/Hz 1/2 ) [44]. Researches using various materials were conducted not only by employing semiconductor materials, but also by using other green materials [45] such as P3HT [46] and MOS 2 [47], but there are no records on the mobility and f c . However, SSD fabricated on graphene possess a large number of carrier density, but having a low mobility value, up to 1400 cm 2 /Vs with largest recorded detection at 67 GHz, as shown in Table 2.…”

Section: Ssd Using Various Materialsmentioning

confidence: 99%

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Zakaria¹,

Kasjoo²,

Isa³

et al. 2019

Bulletin EEI

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In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.

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Section: Ssd Using Various Materialsmentioning

confidence: 99%

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Zakaria¹,

Kasjoo²,

Isa³

et al. 2019

Bulletin EEI

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“…The same method was used and is described in previous work. 49,50,[62][63][64] Calculation of absolute change in conductance…”

Section: Calculation Of I-v Characteristicsmentioning

confidence: 99%

Tuneable graphene nanopores for single biomolecule detection

et al. 2016

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Solid-state nanopores are promising candidates for next generation DNA and protein sequencing. However, once fabricated, such devices lack tuneability, which greatly restricts their biosensing capabilities. Here we propose a new class of solid-state graphene-based nanopore devices that exhibit a unique capability of self-tuneability, which is used to control their conductance, tuning it to levels comparable to the changes caused by the translocation of a single biomolecule, and hence, enabling high detection sensitivities. Our presented quantum simulation results suggest that the smallest amino acid, glycine, when present in water and in an aqueous saline solution can be detected with high sensitivity, up to a 90% change in conductance. Our results also suggest that passivating the device with nitrogen, making it an n-type device, greatly enhances its sensitivity, and makes it highly sensitive to not only the translocation of a single biomolecule, but more interestingly to intramolecular electrostatics within the biomolecule. Sensitive detection of the carboxyl group within the glycine molecule, which carries a charge equivalent to a single electron, is achieved with a conductance change that reaches as high as 99% when present in an aqueous saline solution. The presented findings suggest that tuneable graphene nanopores, with their capability of probing intramolecular electrostatics, could pave the way towards a new generation of single biomolecule detection devices.

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“…In this context, resonant tunneling as one of the unique transport processes in SLs exhibited great promise to enrich the potential of SLs and QW devices including tunnel transistors (TFETs) [ 36–38 ] and resonant tunneling diodes (RTDs). [ 39–43 ] For instance, efficient controlling of resonant tunneling in well/barrier devices gives birth to negative differential resistance (NDR) in RTDs, which is exhibited in numerous reports through modeling [ 43–48 ] and fabrication. [ 49–52 ] However, despite the recent reports on Fermi‐modulation devices, [ 5–8 ] the potential of the velocity modulation in altering the performance of graphene devices has not been investigated yet.…”

Section: Introductionmentioning

confidence: 99%

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

2021

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Negative differential resistance (NDR) devices are adequate candidates for the functional devices applicable to the next‐generation integrated circuit technology so‐called “Beyond CMOS.” Here, a graphene velocity‐modulation‐barrier resonant‐tunneling diode operating at room temperature is proposed. The current–voltage characteristics of the device are analyzed using the non‐equilibrium Green's function technique. It is found that the Fermi velocity barrier in the well/barrier region manipulates the tunneling transmission probability by suppressing the Klein region and improving the resonant tunneling leading to NDR. For special values of velocity barriers, resonant states have maximum alignment with each other which increases peak current with a high peak to valley ratio (PVR). The width and the position of the NDR window are controlled and engineered by the device dimensions and the height of potential barriers. The smaller the device showed the better the NDR properties such as larger current density and maximum PVR. Taken together, the results reveal that adequate magnitude of the Fermi velocity in graphene barrier can be an impressive concept for the fabrication of emerging tunneling devices.

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All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes

Cited by 16 publications

References 46 publications

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Self-switching diodes as RF rectifiers: evaluation methods and current progress

Tuneable graphene nanopores for single biomolecule detection

Fermi Velocity Modulation Induced Low‐Bias Negative Differential Resistance in Graphene Double Barrier Resonant Tunneling diode

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