Self-switching diodes as RF rectifiers: evaluation methods and current progress

Abstract

In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.

Improved Rectification Performance and Terahertz Detection in Hybrid Structure of Self-Switching Device (SSD) and Planar Barrier Diode (PBD) Using Two-Dimensional Device Simulation

“…which are proportional to the curvature coefficient, γ, defined as the ratio of the second order to first order derivative of the device's I-V function [4,[17][18]:…”

“…The uses of conventional pn junction diodes as rectifier are irrelevant for this high frequency application because of the phase lag caused by the slower transition of minority carriers. Hence, unipolar or majority carrier devices such as tunnel diodes, back diodes, and Schottky diodes are utilized in high frequency region [4]. However, because of greater susceptibility to radio frequency (RF) burnout, circuit complications, and fabrication difficulties, tunnel and back diodes have not found as wide acceptance as mixers and detectors at microwave frequencies [5].…”

Omega‐Gate Silicon Nanowire Geometric Diodes with Reconfigurable Self‐Switching Operation and THz Rectification

“…[ 27 ] Similarly, SSDs are typically capable of THz operation, as they only rely on one carrier type and have no explicit junctions; instead, their small device capacitances arise from the field effects of asymmetric geometries. [ 31 ] Although they are commercially available, THz Schottky diodes can be challenging to fabricate. [ 32 ] However, SSDs often involve relatively high‐fidelity fabrication methods, leading to great interest in their development.…”

Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies

“…The application of green energy technologies for energy harvesting (EH) are important tools in prolonging the lifetime of the IoT, extending the lifetime of wireless energyconstrained networks by avoiding the need for hard-wiring or replacing mobile batteries [7,8]. Conventional energy harvesting systems extract energy from the environment via the sun [9], wind, vibration, thermoelectric effects [10], or other physical phenomena, which are less applicable in the scenario where access to external energy sources are limited [11,12].…”

“…In this work, a full-wave bridge rectifier for sustainable 5G network application is proposed by using a silicon-based self-switching device (SSD) [15]. SSDs have received attention from researchers worldwide as they have been reported to effectively function as zero-bias RF detectors [8,18]. The rectification property of the SSD is similar to a pn junction diode, with simplicity in fabrication process where it can be simply realized by one-step lithography process and chemical etching, and does not involve junctions, doping, or third gate terminal [19].…”