All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon

Ikamas, Kęstutis; But, Dmytro B.; Cesiul, Albert; Kołaciński, Cezary; Lisauskas, Tautvydas; Knap, W.; Lisauskas, Alvydas

doi:10.3390/s21175795

Cited by 18 publications

(15 citation statements)

References 36 publications

(49 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The key elements of the developed transmission system are the harmonic oscillator implemented in 65 nm CMOS and the detector implemented in 90 nm CMOS technology. The principles of operation of both devices and the combined performance as an optopair are in detail described elsewhere [18].…”

Section: Devicesmentioning

confidence: 99%

“…The latter, the industrial mainstream complementary metal-oxide-semiconductor (CMOS) technology, is very promising due to its readiness for large-scale integration or implementation of power combining techniques using integrated array antennas for higher output power [12]. Si CMOS-based device has already shown good results in quasi-optical THz imaging systems as radiation detectors [13][14][15] and emitters [16,17] exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth [18]. The new terahertz generation and detection approaches were facilitated by local nonlinearities of field effect transistors, which can be used even above their cut-off frequency for a rectification [19] as well as for frequency up-conversion [20].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Towards wireless data transmission with compact all-electronic THz source and detector system

Cesiul¹,

Ikamas²,

But³

et al. 2022

physics

View full text Add to dashboard Cite

This paper presents a fully-electronic wireless link operating at the 250 GHz frequency. The key elements of the developed system are the voltage-controlled harmonic oscillator implemented in 65 nm complementary metal-oxide-semiconductor technology (CMOS) and a quasi-optical detector with a resonantantenna- coupled field-effect transistor completed in 90 nm CMOS. The source is optimized for the third harmonic emission at 252 GHz with radiated power reaching up to –11 dBm (decibels with reference to one milliwatt) level. The detector has a resonance maximum of 254 GHz with a bandwidth of 25% and a minimal optical noise equivalent power of 22 pW/√−H−z . We employ an on-off keying technique for data coding and demonstrate digital signal transmission from 0.4 to 18 m distances. At 0.4 m distance and modulation frequency of 32 MHz, we achieve a 15.9 dB signal-to-noise ratio. The channel capacity of assembled communication link reaches 266 Mbit/s. However, it is limited by external electronic components – the amplifier and the modulator bandwidths. Implementing state-of-the-art high-frequency circuits should allow directly scaling the throughput to 10 Gbit/s.

show abstract

Section: Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Towards wireless data transmission with compact all-electronic THz source and detector system

Cesiul¹,

Ikamas²,

But³

et al. 2022

physics

View full text Add to dashboard Cite

show abstract

“…Here, P t is the transmitted power, c is the speed of light, G r and G t is the receiving and transmitting antenna gains, A is the propagation loss, R is the communication distance, and f is the communication frequency. The state-of-the-art Si FET emitters using frequency multiplication generate in the order of a hundred of microwatts power in the 300 GHz range [ 105 , 106 ]. However, the TeraFET output power could be increased using a series connection of TeraFETs [ 107 ] and even more by using the plasmonic crystal TeraFETs discussed in the next section with the estimated power output on the order ~100 mW [ 20 ].…”

Section: Plasmonic Terafetsmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

View full text Add to dashboard Cite

Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

show abstract

“…Its direct implementation requires convenience under real operational conditions, optimization, and miniaturization of THz imaging systems with reduced power consumption. Since silicon can be assumed to be one of the most promising materials for the development of compact THz systems containing solid-state-based emitters, room temperature detectors and their arrays, an important role must be attributed to the development of compact flat optics, in particular, considering their further integration into imaging setups 44 , 50 . Moreover, because of the relatively long THz wavelength, a large variety of high-quality compact metasurfaces, amplitude, and phase elements can be flexibly manufactured in a wide cost range.…”

Section: Introductionmentioning

confidence: 99%

Terahertz structured light: nonparaxial Airy imaging using silicon diffractive optics

Ivaškevičiūtė-Povilauskienė

Kizevičius

Nacius

et al. 2022

Light Sci Appl

Self Cite

View full text Add to dashboard Cite

Structured light – electromagnetic waves with a strong spatial inhomogeneity of amplitude, phase, and polarization – has occupied far-reaching positions in both optical research and applications. Terahertz (THz) waves, due to recent innovations in photonics and nanotechnology, became so robust that it was not only implemented in a wide variety of applications such as communications, spectroscopic analysis, and non-destructive imaging, but also served as a low-cost and easily implementable experimental platform for novel concept illustration. In this work, we show that structured nonparaxial THz light in the form of Airy, Bessel, and Gaussian beams can be generated in a compact way using exclusively silicon diffractive optics prepared by femtosecond laser ablation technology. The accelerating nature of the generated structured light is demonstrated via THz imaging of objects partially obscured by an opaque beam block. Unlike conventional paraxial approaches, when a combination of a lens and a cubic phase (or amplitude) mask creates a nondiffracting Airy beam, we demonstrate simultaneous lensless nonparaxial THz Airy beam generation and its application in imaging system. Images of single objects, imaging with a controllable placed obstacle, and imaging of stacked graphene layers are presented, revealing hence potential of the approach to inspect quality of 2D materials. Structured nonparaxial THz illumination is investigated both theoretically and experimentally with appropriate extensive benchmarks. The structured THz illumination consistently outperforms the conventional one in resolution and contrast, thus opening new frontiers of structured light applications in imaging and inverse scattering problems, as it enables sophisticated estimates of optical properties of the investigated structures.

show abstract

All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon

Cited by 18 publications

References 36 publications

Towards wireless data transmission with compact all-electronic THz source and detector system

Towards wireless data transmission with compact all-electronic THz source and detector system

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Terahertz structured light: nonparaxial Airy imaging using silicon diffractive optics

Contact Info

Product

Resources

About