All‐electrical detection of spin Hall effect in semiconductors

Abstract

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Since the prediction of the spin Hall effect more than 40 years ago, significant progress was made in theoretical description as well as in experimental observation, especially in the last decade. In this article, we present three different concepts and measurement geometries for all-electrical detection of the direct and the inverse spin Hall effect in semiconductors. Based on experiments with n-and p-doped GaAs microstructures, we describe our experimental approaches and methods to experimentally identify the spin Hall effect and compare our results to previous experiments and theoretical considerations. Device geometry for the detection of the direct spin Hall effect.

Enhanced spin–orbit coupling in dilute fluorinated graphene

“…With this, we found to be ~ 0. is very difficult to satisfy this condition experimentally, spin Hall angle values might not be truly extracted with the existing theory. Similar to our case, a recent study using the same theory for extracting the spin Hall angle found much larger values than the theoretically predicted values [27]. Further theoretical studies that satisfy the experimental conditions are required for the more accurate values.…”

Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

“…19 We find a ratio of 5 Â 10 À3 for a photon energy of 1.53 eV and a carrier density of $3.8 Â 10 17 cm À3 . This ratio agrees well with the results of an all-electrical study of the spin Hall effect in n-doped GaAs by Ehlert et al, 27 who obtained a value of $10 À3 for the spin Hall angle.…”

Measurements of the magnetic properties of conduction electrons

“…The detecting method is commonly based on the ISHE, where the Hall voltage is induced by spin current. Many experimental setups are described in literature [138,141,[149][150][151][152][153][154], which use various nonmagnetic materials, including normal metals, superconductors, nanotubes etc.…”

“…Two different approaches are mainly used for nonlocal electric detecting of SHE: (1) detecting the "direct SHE" i.e. spin accumulation at two edges of a sample due to SOI, under flow of charge current of unpolarized carriers, and detecting spin magnetization accumulated at the edges with ferromagnetic potential contacts [141,153,155], and (2) detecting the "inverse SHE" (ISHE) by injection of polarized charge carriers via ferromagnetic current contacts and by detecting unbalance in spin accumulation at the edges with nonmagnetic potential contacts [152,[156][157][158].…”

“…Ultrathin Fe/GaAs spin injec a strong in-plane magnetic anisotropy w to inject a spin-polarized current into n-do ( Figure 15. Schematic current distribution in the vicinity of a ferromagnetic contact [141] magnetic strip, and λ sf is the spin diffusion length. For the geometry shown in Fig.…”