Platinum ditelluride (1T-PtTe2) is
a two-dimensional (2D) topological semimetal with a distinctive band
structure and flexibility of van der Waals integration as a promising
candidate for future electronics and spintronics. Although the synthesis
of large-scale, uniform, and highly crystalline films of 2D semimetals
system is a prerequisite for device application, the synthetic methods
meeting these criteria are still lacking. Here, we introduce an approach
to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which
is a cost-efficient method compared to the other epitaxial deposition
methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent
on epitaxy but rather relies on two critical factors: (i) the crystallinity
of the predeposited platinum (Pt) film and (ii) the surface coverage
ratio of the Pt film considering lateral lattice expansion during
transformation. By optimizing the surface coverage ratio of the epitaxial
Pt film, we successfully obtained 2 in. wafer-scale uniformity without
in-plane misalignment between antiparallelly oriented domains. The
electronic band structure of 2D topological PtTe2 is clearly
resolved in momentum space, and we observed an interesting 6-fold
gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical
conductivity down to ∼3.8 nm, which is consistent with that
of single crystal PtTe2, was observed, proving its ultralow
defect density.