AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse

Lee, Jun-Hyeok; Kim, Jeong-Gil; Ju, J.J.; Ahn, Woo-Hyun; Kang, Seung-Hyeon; Lee, Jung‐Hee

doi:10.1016/j.sse.2019.107678

Cited by 8 publications

(2 citation statements)

References 22 publications

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“…When the pulse-mode stress is introduced, the charges are trapped in GaN-based HEMTs. The trapped charges close to AlGaN/GaN hetero-interface modify the carrier density and drain current of the device [27]. For the pulse-mode stress measurement, a pulse applied at the drain electrode increased from 0 V to 10 V, whereas the pulse applied at the gate electrode was fixed at −2 V. In the pulse-mode stress measurements, (V G = 0 V, V D = 0 V) and (V G = −6 V, V D = 10 V) were presented at the quiescent biases for the without-and with-stress conditions, respectively.…”

Section: Resultsmentioning

confidence: 99%

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

et al. 2021

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We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.

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Section: Resultsmentioning

confidence: 99%

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

et al. 2021

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“…It is worthwhile to mention that several ways have been proposed to overcome the limitations of the poor linearity for GaN HEMTs, such as dual-gate HEMTs [5][6][7], doublechannel structure [8][9][10], δ-doping layer [11][12][13], transitionalrecessed-gate technology [14], polarization doping field effect transistors (PolFETs) [15][16][17][18], and GaN FinFETs [19,20]. Apart from that, the reported graded-channel HEMTs also possess a wider and flatter transconductance [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Improvement of DC and f _T performances of graded-channel HEMTs by polarization engineering

Geng¹,

Zhao²,

Yu³

et al. 2022

Semicond. Sci. Technol.

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The graded-channel high-electron-mobility transistors (HEMTs) with graded AlGaN buffer are investigated in this paper by Atlas drift-diffusion simulation. The short-channel effects (SCEs) are suppressed in a manner by employing the graded AlGaN buffer instead of the fixed Al-content AlGaN buffer. Then, the Al-content of the graded AlGaN channel is also optimized. The flatter and wider transconductance and current gain cutoff frequency (fT) curves are garnered by utilizing the graded AlGaN channel whose top Al-content is the same as the AlGaN barrier. At the gate length (LG) of 50 nm, the saturated drain current of the proposed device is 0.98 A/mm, which is 34% higher than the reference device. Simultaneously, the fT and fT×LG are also analyzed with the gate length from 50 nm to 250 nm. The fT of the proposed architecture is 181 GHz at LG = 50 nm and VGS = 1 V which is 12% higher than the reference device under the same conditions. The fT×LG is up to 19.2 GHz·μm at the gate length of 250 nm, and it obtains a 12% improvement over the reference device.

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Fabrication and characterization of GaN-based nanostructure field effect transistors

Son

Thingujam

Dai

et al. 2021

Solid-State Electronics

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AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse

Cited by 8 publications

References 22 publications

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Improvement of DC and f _T performances of graded-channel HEMTs by polarization engineering

Fabrication and characterization of GaN-based nanostructure field effect transistors

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AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse

Cited by 8 publications

References 22 publications

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Improvement of DC and f T performances of graded-channel HEMTs by polarization engineering

Fabrication and characterization of GaN-based nanostructure field effect transistors

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Improvement of DC and f _T performances of graded-channel HEMTs by polarization engineering