Fabrication and characterization of GaN-based nanostructure field effect transistors

Son, Dae‐Ho; Thingujam, Terirama; Dai, Quan; Kim, Jeong-Gil; Cristoloveanu, S.; Lee, Jung‐Hee

doi:10.1016/j.sse.2021.108079

Cited by 4 publications

(2 citation statements)

References 52 publications

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“…[111] high-speed and low-power devices. [86][87][88][89][90][91][92][93] All these devices are thus used in specialized high-speed, frequency, and radiation tolerance applications such as information reception, detection, generation, processing, storage, transfer, and display.…”

Section: Gan-based Semiconductor Devicesmentioning

confidence: 99%

“…The III–V semiconductors also have recently drawn great attention in devices such as field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs),HEMTs etc., due to their potential to solve the Si MOSFETs scaling problem and become the next‐generation high‐speed and low‐power devices. [ 86–93 ] All these devices are thus used in specialized high‐speed, frequency, and radiation tolerance applications such as information reception, detection, generation, processing, storage, transfer, and display.…”

Section: A Brief History and The Current State Of Requirement For Ult...mentioning

confidence: 99%

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A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

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Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium‐based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra‐purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra‐pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current‐day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized

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Section: Gan-based Semiconductor Devicesmentioning

confidence: 99%

Section: A Brief History and The Current State Of Requirement For Ult...mentioning

confidence: 99%

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Ghosh,

Mani

2024

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Choi,

Puneetha,

Mallem

et al. 2024

J Mater Sci: Mater Electron

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Detection of Breast Cancer Cell-MDA-MB-231 by Measuring Conductivity of Schottky Source/Drain GaN FinFET

2022

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Fabrication and characterization of GaN-based nanostructure field effect transistors

Cited by 4 publications

References 52 publications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications

Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor

Detection of Breast Cancer Cell-MDA-MB-231 by Measuring Conductivity of Schottky Source/Drain GaN FinFET

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