Alignment of energy levels at the ZnS/Cu(In,Ga)Se2 interface

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

“…The valence band onset of the ZTO films was observed around 2 eV, irrespective of cation composition. At the ZTO/CIGS interface, the onset values continuously changed due to band bending until in the CIGS region where it remained constant between 0.45 and 0.48 eV, which correlate well with the value obtained by using ultraviolet photoelectron spectroscopy . The VBO at the ZTO/CIGS heterojunction interface was then determined by using the formula used in the work by Sun et al …”

“…5 For these reasons, alternative cheap, environmentally friendly and equally efficient buffers are being explored to replace CdS. In 2 S 3, 5,6 Zn(O,S)/ ZnS, [7][8][9][10] ZnMgO, 11 and Zn 1-x Sn x O y (ZTO) 12 are a few of the actively studied buffer materials. Among them, ZTO has attracted much attention because of the abundance of its constituent elements, its large tunable band gap, and good stability.…”

“…In Figure 5A olet photoelectron spectroscopy. 10 The VBO at the ZTO/CIGS heterojunction interface was then determined by using the formula used in the work by Sun et al 34 VBO…”

The role of a TiCl4 treatment on the performance of CdS quantum-dot-sensitized solar cells

“…The open-circuit voltage is mainly affected by the TiO 2 conduction-band position, and recombination rates [20,21], and the short-circuit current is influenced by the light-harvesting efficiency, recombination rates, and transport properties [22,23].…”

Band alignment at the Cu2SnS3/In2S3 interface measured by X-ray photoemission spectroscopy

“…The band gap can be estimated by extrapolating the linear region of 2 ( ) hv  vs hv to zero [23,24]. Fig.4 shows the absorbance spectra of CTS (a) and In 2 S 3 (b) films with 2 ( ) hv  vs A c c e p t e d M a n u s c r i p t hv curve in the inset.…”