Algorithm for building a spectrum for NREL's One-Sun Multi-Source Simulator

Moriarty, T.; Jablonski, Joe; Emery, Keith

doi:10.1109/pvsc.2012.6317838

Cited by 34 publications

(29 citation statements)

References 1 publication

(1 reference statement)

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“…[14]. Other devices where a similar temperature dependence influences the series connection are multi-junction cells designed for the solar spectrum where "2n" junctions are realized with only "n" bandgap materials in order to boost the voltage and reduce the current [15].…”

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

On the temperature dependence of dual‐junction laser power converters

Reichmuth

Helmers

Philipps

et al. 2016

Progress in Photovoltaics

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Dual-junction GaAs laser power converters optimized for one monochromatic wavelength are presented, and their temperature dependence is experimentally evaluated. External quantum efficiency and irradiance-dependent currentvoltage measurements (10 to 104 W/cm 2 ) under monochromatic laser light (809 nm) have been undertaken to quantify temperature-and irradiance-dependent effects on the performance. The temperature dependence of the current matching of the two subcells, caused by the temperature-dependent absorbance, is quantified. Losses in performance due to variations in operating temperature for different power-by-light applications are calculated to be between 16.2% and 21.0%. Future potential enhancements in cell performance are discussed. For elevated temperatures, super-linear behavior of the spectral response with increasing irradiance is observed, which is attributed to effective luminescent coupling from the top to the bottom subcell as the device becomes more radiative limited. For low temperatures, where the bottom cell is overproducing, no dependence on irradiance is found, which shows the influence of photon transport losses to the substrate.

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Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

On the temperature dependence of dual‐junction laser power converters

Reichmuth

Helmers

Philipps

et al. 2016

Progress in Photovoltaics

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“…The voids tend to burst during processing, which result in reduced current, and/or shunts through the top three junctions in stack. Based upon previous research of direct bonds, we attribute large void formation to particle contaminants with diameters on the order of a 1 μm [7]. Consequently, we have improved wafer handling and cleaning prior to the bonds to reduce the probability of particle contamination.…”

Section: A Bonding Process Improvementsmentioning

confidence: 99%

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

Chiu¹,

Law²,

Woo³

et al. 2014

IEEE J. Photovoltaics

110

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Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/ 0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The top three junctions and bottom two junctions were grown on GaAs and InP substrates, respectively, by metal organic vapor phase epitaxy. The GaAs-and InP-based cells were then direct bonded to create a lowresistance, high-transmissive interface. Both the space and terrestrial cells have high 1 sun V o c between 4.75 and 4.78 V. Initial tests of the terrestrial cells at concentration are promising with efficiencies increasing up to 10× concentration to a maximum value close to 41%.

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“…We have also verified that excess 1-eV bottom subcell photocurrents cause artificial increases in FF with carefully controlled experiments in a 1-sun multisource simulator [12,13]. The irradiance into the bottom subcell of a GaInP/GaAs/GaInAs triple-bandgap cell was varied from the balanced condition while the middle-top photocurrent ratio was held at 1.00.…”

Section: Excess Subcell Photocurrentsmentioning

confidence: 60%