AlGaN solar-blind avalanche photodiodes with high multiplication gain

Sun, Lu; Chen, Jilin; Li, Jianfei; Jiang, Hao

doi:10.1063/1.3515903

Cited by 95 publications

(44 citation statements)

References 16 publications

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“…One solution is to separate the absorption layer and the multiplication layer by a thin n-type charge layer, this so-called back-illuminated separate absorption and multiplication (SAM) GaN APDs 7 can effectively suppress electrons injected into multiplication layer, allowing for nearly pure hole multiplication and thus enhance gain as well as reduce noise. Since the first SAM GaN APD was proposed and demonstrated by Pau 8 in 2008, variations in this basic structure, including SAM GaN/SiC APDs 9 and SAM AlGaN solar-blind APDs, 10,11 have been reported. However, few works give a full theoretical description on SAM GaN-based APDs for further structural optimization, especially the dependence of gain characteristics on environmental temperature and device dimension.…”

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confidence: 99%

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Wang

Pan

et al. 2014

Journal of Applied Physics

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The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

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confidence: 99%

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Wang

Pan

et al. 2014

Journal of Applied Physics

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“…[1][2][3][4] GaN based opto-electronic devices such as light emitting diodes, avalanche photodiodes, and electronic devices such as high electron mobility transistors (HEMTs) require good quality Schottky contacts for a reliable performance. [5][6][7][8] For HEMT applications, a Schottky gate contact with large barrier height is always desirable to achieve improved transconductance, maximum drain current and high breakdown voltage of the device. It also results in small gate leakage current, thus reducing the noise level.…”

Section: Introductionmentioning

confidence: 99%

Investigation of significantly high barrier height in Cu/GaN Schottky diode

et al. 2016

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Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O) layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

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“…State-of-the-art SiC APDs employing a recessed top window exhibit peak quantum efficiency (QE) of 60% at 268 nm, k factor of ~ 0.1, and dark current of 90 pA at a gain of 1000 (6,7). These dark currents are approximately three orders of magnitude lower than what has been reported for Al x Ga 1-x N based APDs (2,5) However, the responsivity of these devices diminishes at wavelengths shorter than 260 nm due to increasing absorption and carrier generation in the top doped layer of this device, the short diffusion length of minority carriers in this region, and the presence of a high density of surface states.…”

Section: Introductionmentioning

confidence: 83%

(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

et al. 2014

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In this paper we report on two new approaches for increasing the the deep ultraviolet response (l < 260 nm) of 4H-SiC photodiodes by employing p-n- SiC- metal or p-n- SiC – n- AlxGa1-xN structures. The p-n- SiC- metal diodes, employing a transparent window metal, have a nearly flat response between 200-270 nm with peak external quantum efficiency (EQE) of 45%. A peak QE of 76% is observed for the p-n- SiC – n- AlxGa1-xN diodes at 242 nm. The significant enhancement in short wavelength response observed in both diodes is attributed to preferential absorption of deep ultraviolet photons within the depletion region of these structures as compared to that in the top doped layer of a p-i-n SiC photodiode, and the more efficient collection of photo-generated carriers through drift despite the presence of surface/interface states.

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AlGaN solar-blind avalanche photodiodes with high multiplication gain

Cited by 95 publications

References 16 publications

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

Investigation of significantly high barrier height in Cu/GaN Schottky diode

(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

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