AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter

Kimoto, Tsunenobu; Suda, Jun

doi:10.1109/ted.2013.2273499

Cited by 5 publications

(3 citation statements)

References 31 publications

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“…With these efforts, we achieved the maximum common-base current gains of 0.1 and 0.2 in the GaN/AlN/SiC HBTs with a 1-nmthick AlN layer without N + pre-irradiation and a 2-nm-thick AlN layer with N + pre-irradiation, respectively. A subsequent study to further improve the current gain by the band offset control of the GaN/SiC heterojunction with an AlN/GaN superlattice emitter 24,25) will be described elsewhere.…”

Section: Discussionmentioning

confidence: 99%

Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Kimoto

Suda

2014

Jpn. J. Appl. Phys.

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GaN/SiC heterojunction bipolar transistors (HBTs) with an ultrathin AlN spacer layer at the n-GaN/p-SiC emitter junction are proposed for the control of the electronic properties of GaN/SiC heterojunctions. The insertion of an AlN spacer is found to be promising in terms of improving electron injection efficiency owing to the reduced potential barrier (0.54 eV) to electron injection and reduced recombination via interface traps. We also investigated the effect of pre-irradiation of active nitrogen atoms (N*) prior to AlN growth for the control of the electronic properties of GaN/AlN/SiC heterojunctions. We found that the potential barrier was further reduced to 0.46 eV by N* pre-irradiation. The HBT structure was successfully fabricated using our newly developed process featuring ion implantation and Pd ohmic contacts to obtain a low contact resistivity to a p-SiC base at a temperature as low as 600 °C. A fabricated HBT without an AlN layer showed a low current gain (α ∼ 0.001), whereas the GaN/AlN/SiC HBT showed improved current gains of 0.1 in the case of using a 1-nm-thick AlN spacer without N* pre-irradiation and 0.2 in the case of using a 2-nm-thick AlN spacer with N* pre-irradiation.

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Section: Discussionmentioning

confidence: 99%

Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Kimoto

Suda

2014

Jpn. J. Appl. Phys.

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“…Maximum common-base current gains of 0.01 and 0.03 were obtained on GaN/4H-SiC HBTs and GaN/6H-SiC HBTs, respectively, with a base doping concentration of 1 Â 10 18 cm À3 . Continuous work to achieve a high emitter injection efficiency, e.g., by the utilization of an AlN spacer layer with a smaller lattice mismatch with SiC 22) and the band offset control of the GaN/SiC heterojunction with an AlGaN emitter, 23,24) will be presented in the future.…”

Section: Discussionmentioning

confidence: 99%

Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

Amari¹,

Kimoto²,

Suda³

2013

Jpn. J. Appl. Phys.

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The growth, electrical characterization, and electroluminescence (EL) of GaN/SiC heterojunction bipolar transistors (HBTs) are presented. GaN grown on off-axis SiC by molecular beam epitaxy showed step bunching owing to the large off-angle of SiC substrates, which contributed to the annihilation of edge dislocations. We investigated the impact of base doping concentration and SiC polytype (4H and 6H) on the characteristics of GaN/SiC heterojunction diodes. By utilizing a reduced doping concentration of 1×1018 cm-3 instead of 1×1019 cm-3, we suppressed the tunneling current via interface traps, resulting in an improved rectifying behavior in the diodes. Capacitance–voltage (C–V) and EL characteristics revealed that the band lineup of GaN/SiC is of type II, and 6H-SiC is better for electron injection. In accordance with diode characteristics, the fabricated GaN/SiC HBTs showed an improved common-base current gain of 0.03 by employing a reduced base doping concentration of 1×1018 cm-3 and 6H-SiC, whereas a current gain below 1×10-4 was obtained in the HBTs with a base doping concentration of 1×1019 cm-3.

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“…Afterwards, fully-vertical GaN SBD on SiC was realized via simple device fabrication process. The vertical SBD showed a R ON,sp of 0.84 mΩ•cm 2 and a high forward current density of 1.8 kA cm −2 @3 V. This epitaxial strategy can also be used for SiC/GaN heterogeneous integration by combining the merits of both GaN and SiC on a single platform [17][18][19].…”

Section: Introductionmentioning

confidence: 90%

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

Sun,

Feng,

Wei

et al. 2024

Semicond. Sci. Technol.

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In this letter, vertically conductive GaN epilayer on SiC substrate was achieved without the typically used conductive buffer layer. Here, in order to reduce the impacts of band offset of different layers on vertical conductivity and improve the vertical carrier transportation, an ultrathin AlGaN buffer layer was employed to replace the thick conductive buffer layer. Fully-vertical Schottky barrier diode (SBD) based on this vertically conductive epi-stack demonstrated a much lower specific on-resistance of 0.84 mΩ∙cm2 with superior thermal stability. Moreover, the SBD also exhibited an on/off ratio of ~5×109 and a nearly unity ideality factor of 1.08. This approach lays the foundation for the heterogeneous integration of GaN/SiC based devices.

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AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter

Cited by 5 publications

References 31 publications

Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

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