Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Kimoto, Tsunenobu; Suda, Jun

doi:10.7567/jjap.53.034101

Cited by 18 publications

(2 citation statements)

References 25 publications

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“…We observed that the turn-on voltage ( 0.75 V) was smaller compared with the flatband voltage ( 1.2 V) and the magnitude of the current increased for larger reverse bias voltage for respective curves. Similar result was observed in the p-GaAs/n-GaN (11) and p-SiC/n-GaN (12) junctions fabricated by wafer fusion and molecular beam epitaxy, respectively, which was attributed to the scheme of interface states assisted tunneling. The interface states should be formed at the boding interface of the p + -GaAs/n-SiC heterojunction and distributed in the amorphous layer of the bonded interface, which is due to damages fabricated during the Ar plasma irradiation in the SAB process according to our previous report.…”

Section: Discussionsupporting

confidence: 80%

Determination of Band Structure at GaAs/4H-SiC Heterojunctions

Liang¹,

Shimizu²,

Arai³

et al. 2016

ECS Trans.

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The effects of thermal annealing process on the interface in p+-GaAs/n-SiC heterojunctions fabricated by using surface-activated bonding (SAB) were investigated. It was found by measuring their current-voltage (I-V) characteristics that the reverse-bias current and the ideality factor were extracted to be 7.57 ´ 10-7 A/cm2 and 1.33, respectively, for the junctions annealed at 400 °C. The flat-band voltage obtained from capacitance-voltage (C-V) measurements was found to be 1.29 eV, which is almost consistent with the turn-on voltage extracted from I-V characteristics. These results suggest that the SAB-based GaAs/SiC heterojunctions are applicable for fabricating high-frequency power devices.

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Section: Discussionsupporting

confidence: 80%

Determination of Band Structure at GaAs/4H-SiC Heterojunctions

Liang¹,

Shimizu²,

Arai³

et al. 2016

ECS Trans.

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“…Maximum common-base current gains of 0.01 and 0.03 were obtained on GaN/4H-SiC HBTs and GaN/6H-SiC HBTs, respectively, with a base doping concentration of 1 Â 10 18 cm À3 . Continuous work to achieve a high emitter injection efficiency, e.g., by the utilization of an AlN spacer layer with a smaller lattice mismatch with SiC 22) and the band offset control of the GaN/SiC heterojunction with an AlGaN emitter, 23,24) will be presented in the future.…”

Section: Discussionmentioning

confidence: 99%

Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

Amari¹,

Kimoto²,

Suda³

2013

Jpn. J. Appl. Phys.

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The growth, electrical characterization, and electroluminescence (EL) of GaN/SiC heterojunction bipolar transistors (HBTs) are presented. GaN grown on off-axis SiC by molecular beam epitaxy showed step bunching owing to the large off-angle of SiC substrates, which contributed to the annihilation of edge dislocations. We investigated the impact of base doping concentration and SiC polytype (4H and 6H) on the characteristics of GaN/SiC heterojunction diodes. By utilizing a reduced doping concentration of 1×1018 cm-3 instead of 1×1019 cm-3, we suppressed the tunneling current via interface traps, resulting in an improved rectifying behavior in the diodes. Capacitance–voltage (C–V) and EL characteristics revealed that the band lineup of GaN/SiC is of type II, and 6H-SiC is better for electron injection. In accordance with diode characteristics, the fabricated GaN/SiC HBTs showed an improved common-base current gain of 0.03 by employing a reduced base doping concentration of 1×1018 cm-3 and 6H-SiC, whereas a current gain below 1×10-4 was obtained in the HBTs with a base doping concentration of 1×1019 cm-3.

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Cell structure imaging with bright and homogeneous nanometric light source

Fukuta

Ono

Nawa

et al. 2016

Journal of Biophotonics

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Label-free optical nano-imaging of dendritic structures and intracellular granules in biological cells is demonstrated using a bright and homogeneous nanometric light source. The optical nanometric light source is excited using a focused electron beam. A zinc oxide (ZnO) luminescent thin film was fabricated by atomic layer deposition (ALD) to produce the nanoscale light source. The ZnO film formed by ALD emitted the bright, homogeneous light, unlike that deposited by another method. The dendritic structures of label-free macrophage receptor with collagenous structure-expressing CHO cells were clearly visualized below the diffraction limit. The inner fiber structure was observed with 120 nm spatial resolution. Because the bright homogeneous emission from the ZnO film suppresses the background noise, the signal-to-noise ratio (SNR) for the imaging results was greater than 10. The ALD method helps achieve an electron beam excitation assisted microscope with high spatial resolution and high SNR.

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Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors

Cited by 18 publications

References 25 publications

Determination of Band Structure at GaAs/4H-SiC Heterojunctions

Determination of Band Structure at GaAs/4H-SiC Heterojunctions

Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

Cell structure imaging with bright and homogeneous nanometric light source

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