AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Yue, Yuanzheng; Hao, Yue; Zhang, Jincheng; Ni, JinYu; Mao, Wei; Feng, Qian; Liu, Linjie

doi:10.1109/led.2008.2000949

Cited by 132 publications

(73 citation statements)

References 14 publications

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“…The nucleation layer is used to increase crystalline quality, surface morphology and electrical properties of the GaN layer. 19 In Fig. 2, the graph 1 (black) and graph 2 (red) indicates the heterostructure without and with SiN passivation.…”

Section: Methodsmentioning

confidence: 99%

“…17,18 The influence on carrier concentration of AlGaN/GaN heterostructures by various passivation layers have been investigated in past by different groups as reported in literature. 18,19 However, further comparative in-depth analysis of strain induced carrier confinement at the AlGaN/GaN interface before and after passivation is needed to thoroughly elucidate the passivation phenomenon.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

et al. 2015

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Enhancement of two dimensional electron gas (2DEG) concentrations at Al0.3Ga0.7N/GaN hetero interface after a-Si3N4 (SiN) passivation has been investigated from non-destructive High Resolution X-ray Diffraction (HRXRD) analysis, depletion depth and capacitance-voltage (C-V) profile measurement. The crystalline quality and strained in-plane lattice parameters of Al0.3Ga0.7N and GaN were evaluated from double axis (002) symmetric (ω-2θ) diffraction scan and double axis (105) asymmetric reciprocal space mapping (DA RSM) which revealed that the tensile strain of the Al0.3Ga0.7N layer increased by 15.6% after SiN passivation. In accordance with the predictions from theoretical solution of Schrödinger-Poisson’s equations, both electrochemical capacitance voltage (ECV) depletion depth profile and C-V characteristics analyses were performed which implied effective 9.5% increase in 2DEG carrier density after passivation. The enhancement of polarization charges results from increased tensile strain in the Al0.3Ga0.7N layer and also due to the decreased surface states at the interface of SiN/Al0.3Ga0.7N layer, effectively improving the carrier confinement at the interface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

et al. 2015

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“…6 In the last years, several high permittivity oxides (Al 2 O 3 , HfO 2 , Gd 2 O 3 , MgO, Sc 2 O 3 , NiO) have been considered as gate insulators in AlGaN/GaN technology, [7][8][9][10][11] with HfO 2 showing remarkably high permittivity values (k > 20). 12,13 Cerium oxide (CeO 2 ) has excellent electrical properties, like a band gap of $6 eV, a high permittivity (k ¼ 15-26), and a critical electric field of 4.9 MV/cm. 14 Although preliminary measurements on metal/CeO 2 /GaN capacitors have been already reported, 15 the implementation of CeO 2 on AlGaN/GaN heterostructures was not demonstrated yet.…”

mentioning

confidence: 99%

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Fiorenza

Greco

Fisichella

et al. 2013

Applied Physics Letters

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Cerium oxide (CeO2) thin films have been grown by metal-organic chemical vapor deposition on AlGaN/GaN heterostructures and their insulating properties as gate dielectric layer have been explored. The deposited thin films have been found to be textured on the GaN based heterostructures and exhibited a permittivity of 26. This high permittivity value and large band gap are certainly advantageous with respect to other reported materials for the metal insulator semiconductor high electron mobility transistor application. The reduced leakage current density clearly suggests that these CeO2 films are very promising as gate dielectric for AlGaN/GaN transistors low power consumption technology.

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“…Among various device structures, AlGaN/GaN MOSHFETs [1][2][3] are attractive because of the high electron mobility in the AlGaN/GaN heterointerface and small gate leakage current due to the gate oxide. Among various high-k materials such as HfO 2 [3,4], ZrO 2 [5] and Al 2 O 3 [6] as a gate insulator in the AlGaN/GaN MOSHFETs, Al 2 O 3 having a relatively high dielectric constant (ε r = 8-10) [6] is attractive because of a large conduction band offset against GaN (2.2 eV) [7], leading to a suppression of the gate leakage current.…”

mentioning

confidence: 99%

Improvement of the electrical properties of Al₂O₃/AlGaN/GaN MOSHFETs by gate‐first process

Miyazaki

Kishimoto

Mizutani

2013

Phys. Status Solidi C

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We have studied “gate‐first process” in the fabrication of the Al2O3/AlGaN/GaN metal‐oxide‐semiconductor heterostructure field‐effect transistors (MOSHFETs) to improve the electrical properties of the MOSHFETs, where Al2O3 gate oxide is deposited before ohmic contact alloying. The interface state density of the Al2O3/GaN MOS diodes fabricated by the gate‐first process was more than one order of magnitude smaller than that of the diodes fabricated by the conventional “gate‐last process” where Al2O3 gate oxide was deposited after ohmic contact alloying. In addition, the saturation of the drain current at large gate voltages in the ID‐VGS characteristics of the Al2O3/AlGaN/GaN MOSHFETs was relaxed and the maximum drain current was increased by employing the gate‐first process. The hysteresis width of the ID‐VGS curve of the MOSHFETs fabricated by the gate‐first process was smaller than that of the devices fabricated by the gate‐last process. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Cited by 132 publications

References 14 publications

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Improvement of the electrical properties of Al₂O₃/AlGaN/GaN MOSHFETs by gate‐first process

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AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Cited by 132 publications

References 14 publications

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSHFETs by gate‐first process

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Improvement of the electrical properties of Al₂O₃/AlGaN/GaN MOSHFETs by gate‐first process