AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

Chou, Dei-Wei; Lee, Kuan Wei; Huang, Jian; Wu, Hou Run; Wang, Yeong-Her; Houng, Mau Phon; Chang, Shoou Jinn; Su, Yan Kuin

doi:10.1143/jjap.41.l748

Cited by 29 publications

(12 citation statements)

References 5 publications

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“…For MOS-PHEMT, the 1.8 V-wide gate voltage swing (defined by 10% reduction from the maximum g m ) is higher than that of the PHEMT. The threshold voltage V th of MOS-PHEMT shifts to the left, which is similar to the result of the one with oxide deposited on the Schottky layer [20,21]. However, the separation region between the oxide-InGaP interface and the InGaAs channel for MOS-PHEMT is still larger than that of the reference PHEMT in this study, so the drain current density of the PHEMT is smaller than that of the MOS-PHEMT at the same bias V GS due to the decrease of the carrier concentration within the InGaAs 2DEG channel.…”

supporting

confidence: 69%

Liquid Phase Oxidation on InGaP and Its Applications

Wang¹,

Lee²

2010

Advances in Solid State Circuit Technologies

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IntroductionHigh-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have attracted many attentions in high speed and power applications due to the superior transport properties. As compared to AlGaAs pseudomorphic HEMTs (PHEMTs), InGaPrelated devices have advantages, such as higher band gaps, higher valence-band discontinuity [1], negligible deep-complex (DX) centers [2], excellent etching selectivity between InGaP and GaAs, good thermal stabilities [3][4][5], higher Schottky barrier heights [3], and so on. Particularly, the use of an undoped InGaP insulator takes the advantages of its low DX centers and low reactivity with oxygen [6-10], which may still suffer from the high gate leakage issue. In order to inhibit the gate leakage issue, increase the power handling capabilities, and improve the breakdown voltages, a metal-oxide-semiconductor (MOS) structure has been widely investigated. However, it is still lacks a reliable native oxide film growing on InGaP, and very few papers have reported on InGaP/InGaAs MOS-PHEMTs. In addition, the MOS-PHEMT not only has the advantages of the MOS structure (e.g., lower leakage current and higher breakdown voltage) but also has the high-density, high-mobility 2DEG channel. Over the past years, a study on the liquid phase oxidation (LPO) of InGaP near room temperature has been done [11][12][13][14]. The application of surface passivation to improve the InGaP/GaAs HBTs' performance has also been first demonstrated [13]. The InGaP/GaAs HBTs with surface passivation by LPO exhibit significant improvement in current gain at low collector current regimes due to the reduction of surface recombination current, as compared to those without surface passivation. Moreover, a larger breakdown voltage and a lower base recombination current are also obtained. In this chapter, the oxide film composition and some issues are addressed. Then a thin InGaP native oxide film prepared by the LPO as the gate dielectric for InGaP/InGaAs MOS-PHEMTs application are discussed, and the comparisons between devices with and without LPO passivation on the InGaP/GaAs HBTs are also reviewed.

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supporting

confidence: 69%

Liquid Phase Oxidation on InGaP and Its Applications

Wang¹,

Lee²

2010

Advances in Solid State Circuit Technologies

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“…It was also found that this device cannot be completely turned off even with V g ϭ Ϫ3.5 V. Similar phenomena were also reported by other research groups. 6,9,20 Such an observation indicates that there exists a source-to-drain (S-D) leakage path in our AlGaN/ GaN MOSHFET. We believe such a large S-D leakage current originated from the 2-m-thick, unintentionally doped GaN layer.…”

Section: Characteristics Of Algan/gan Metal-oxide Semiconductor Hetermentioning

confidence: 83%

“…Recently, many researches were focused on the fabrication of GaN-based metal-insulator-semiconductor HFETs (MISHFETs) by using Si 3 N 4 ; Ga 2 O 3 ; Gd 2 O 3 ; plasma-enhanced, chemical-vapor-deposited (PECVD) SiO 2 ; and liquid-phase-deposited (LPD) SiO 2 as insulating materials. [1][2][3][4][5][6][7][8][9] Previously, we have shown that photo chemical-vapor deposition (photo-CVD) can also be used to grow high-quality SiO 2 layers 10-13 on various semiconductor substrates. In using photo-CVD to grow thin films, it is very important to select the proper light source with a radiation spectrum matching the absorption spectra of the reactance gases.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Wang

Chiou

Chang

et al. 2003

Journal of Elec Materi

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High-quality SiO 2 was successfully deposited onto GaN by photo-chemicalvapor deposition (photo-CVD) using a D 2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-m gate, it was found that the saturated I ds , maximum g m , and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

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“…In addition, neither anodic equipment nor an assisting energy source is required in the LPD system. Our previous studies have shown LPD-SiO 2 on Si, 13 GaAs, 14 GaN, 15 and AlGaAs. 16 Based on our experiments, however, the LPD-SiO 2 method is unsuitable for certain types of semiconductor materials, as shown in Table I, which limits further device applications.…”

mentioning

confidence: 90%

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric

Lee

2012

ECS J. Solid State Sci. Technol.

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This study describes AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOSPHEMTs) with a liquid phase deposited SiO 2 (LPD-SiO 2 ) as the gate dielectric. Compared to its counterpart PHEMT, the AlGaAs/InGaAs MOS-PHEMT exhibits a larger gate bias operation, a higher breakdown voltage, a lower subthreshold current, and an improved gate leakage current with an effectively suppressed impact ionization effect. Consequently, LPD-SiO 2 may also be used as gate oxides and as effective passivation on III-V compound semiconductor devices.InGaAs-channel transistors, such as pseudomorphic highelectronic-mobility transistors (PHEMTs), are useful for achieving enhanced electron mobility. Recent progress in AlGaAs/InGaAs PHEMTs with a low Al-content AlGaAs Schottky layer grown on top of an InGaAs channel has shown promising features and performance in communication systems and for commercial purposes. However, the main issues of Schottky-based devices are limited gate voltage swing, lower breakdown voltage, and higher gate leakage current. Insulators are commonly chosen for growth on the III-V compound semiconductor to fabricate the metal-oxide-semiconductor (MOS) gate with a larger gate swing voltage and lower leakage current. [1][2][3][4] Silicon dioxide (SiO 2 ) is one of the commonly used dielectrics for III-V semiconductor devices. Numerous methods have been used to successfully deposit SiO 2 films, such as low-pressure chemical vapor deposition (LPCVD), 5 plasma-enhanced chemical vapor deposition (PECVD), 6,7 electron cyclotron resonance chemical vapor deposition (ECR-CVD), 8 sputtering, 9 rapid thermal oxidation (RTO), 10 and liquid phase deposition (LPD). 11,12 Compared with other methods, LPD is a low-cost and low-temperature process. In addition, neither anodic equipment nor an assisting energy source is required in the LPD system. Our previous studies have shown LPD-SiO 2 on Si, 13 GaAs, 14 GaN, 15 and AlGaAs. 16 Based on our experiments, however, the LPDSiO 2 method is unsuitable for certain types of semiconductor materials, as shown in Table I, which limits further device applications. In this study, the 1×100 μm 2 AlGaAs/InGaAs MOS-PHEMT with an LPD-SiO 2 as a gate dielectric was fabricated and direct-current (dc) characteristics were discussed. ExperimentalThe proposed device structures were grown by metal-organic chemical vapor deposition (MOCVD) on a semi-insulating GaAs substrate. The buffer layer consists of 100 nm undoped GaAs, followed by 250 nm undoped Al 0.2 Ga 0.8 As followed by 60 nm GaAs. A 10 nm Al 0.2 Ga 0.8 As with a Si doping density of 4.5 × 10 17 cm −3 and a 2 nm undoped Al 0.2 Ga 0.8 As spacer layer were then grown on the buffer layer, followed by a 14 nm undoped In 0.15 Ga 0.85 As channel layer, a 2 nm undoped Al 0.2 Ga 0.8 As spacer layer, a 18 nm Al 0.2 Ga 0.8 As donor layer with a Si doping density of 1.2×10 18 cm −3 , a 70 nm Al 0.2 Ga 0.8 As Schottky layer with a Si doping density of 1 × 10 17 cm −3 , and a 60 nm GaAs cap layer. Hall measurements sho...

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AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

Cited by 29 publications

References 5 publications

Liquid Phase Oxidation on InGaP and Its Applications

Liquid Phase Oxidation on InGaP and Its Applications

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric

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AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

Cited by 29 publications

References 5 publications

Liquid Phase Oxidation on InGaP and Its Applications

Liquid Phase Oxidation on InGaP and Its Applications

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO2as the Gate Dielectric

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Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric