Abstract:IntroductionHigh-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have attracted many attentions in high speed and power applications due to the superior transport properties. As compared to AlGaAs pseudomorphic HEMTs (PHEMTs), InGaPrelated devices have advantages, such as higher band gaps, higher valence-band discontinuity [1], negligible deep-complex (DX) centers [2], excellent etching selectivity between InGaP and GaAs, good thermal stabilities [3][4][5], higher Schottky b… Show more
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