AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

Mokerov, V. G.; Кузнецов, А. Л.; Fedorov, Yu. V.; Бугаев, А. С.; Pavlov, Alexey N.; Enyushkina, E. N.; Gnatyuk, D. L.; Zuev, A. V.; Galiev, R. R.; Ovcharenko, E. N.; Sveshnikov, Yu. N.; Tsatsulnikov, A. F.; Ustinov, V. M.

doi:10.1134/s1063782609040253

Cited by 15 publications

(7 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In literature it has already been noted [13] that in the general case the expressions (14)- (17), defining the limit values of high frequency parameters of field-effect transistors, do not work for the real transistors with various n and d values. The authors in [13] suppose that it can be associated with not taking into account the influence of some (so-called parasitic) components R s and R d of the external transistor EC (Table 2). With these corrections, according to [13], the expressions for f T and f max have the following form:…”

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

“…The authors in [13] suppose that it can be associated with not taking into account the influence of some (so-called parasitic) components R s and R d of the external transistor EC (Table 2). With these corrections, according to [13], the expressions for f T and f max have the following form:…”

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

“…In our opinion, the reason for it consists in a failure to take into account the relation of the internal transistor linear model parameters P k,i and non-linear-fractal in particular-parameters of HES electrophysical properties. It is possible to assume, that the reason of the divergences of the experimental and calculated results observed in [13][14][15][16]33] is associated with the fact that (19) and (20) do not take into account such important parameters P k,i of the internal transistor linear model as C ds and C gd , C gs , g max , R gs = R i and R ds , which in local approximation are totally defined by non-linear (fractal) HES electrophysical parameters p k,i depending on n and d.…”

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

“…Despite a growing number of investigations into this sphere [13][14][15][16], the nature of size effects in semiconductor device engineering, and specifically, its inquiry for the purpose of improving FET device characteristics, remain understudied. This is one of the main reasons why today there is no possibility to reliably predict the HF small signal and power characteristics of field-effect transistors in relation to the linear size of their structural elements (e.g., width of sections d and their number nnumber of fingers).…”

Section: The Basic Concepts Of Fractal Geometry In the Context Of Itsmentioning

confidence: 99%

See 3 more Smart Citations

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

2019

View full text Add to dashboard Cite

The investigation of size effects appearing in the dependence of AlGaN/GaN HEMT high-frequency characteristics on channel width d and number of sections n is conducted using the notions of measure, metric and normed functional (linear) spaces. In accordance with the results obtained, in local approximation the phenomenon of similarity can exist, not only in metric spaces of heteroepitaxial structures, but also in the defined on them functional spaces of the measures of these structures’ additive electrophysical characteristics. This provides means to associate size effects of the HEMTs with their structure material fractal geometry. The approach proposed in the work gives an opportunity, not only to predict the size of the structural elements (e.g., channel width and number of sections) of the transistor with the desired characteristics, but also to reconstruct its compact model parameters, which significantly speeds up the development and optimization of the HEMTs with the desired device characteristics. At transferring to the global approximation, when the topological and fractal dimensions of the structure coincide, its electrophysical characteristics, and subsequently, the values of the compact model equivalent circuit parameters, as well as HEMT high frequency characteristics, follow the classic (linear) laws peculiar to the spaces of integer topological dimensions DT.

show abstract

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

Section: Discussion Of the Experimental Resultsmentioning

confidence: 99%

Section: The Basic Concepts Of Fractal Geometry In the Context Of Itsmentioning

confidence: 99%

See 2 more Smart Citations

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

2019

View full text Add to dashboard Cite

show abstract

“…Pulsed ionizing laser radiation is also used for on-line testing of electronic equipment as when it is absorbed in semiconductor structures, a photocurrent pulse occurs generated as a result of electron-hole pairs formation. Testing can be held of both manufactured semiconductor devices with no upper part of the casing over the crystal, and waffer pattern structures using probe methods at the earliest stages of electronic device fabrication [5,6].…”

Section: Introductionmentioning

confidence: 99%

Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation

Pashentsev

2022

Technical Physics

View full text Add to dashboard Cite

The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5-8 GHz and integrated amplifiers with an operating frequency range of 0.4-6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 μm and 0.53 μm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs. Keywords: laser radiation, transistor, microwave amplifier, photocurrent, current-voltage characteristic.

show abstract

Nature of size effects in compact models of field effect transistors

Torkhov

Бабак

Kokolov

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of the equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.

show abstract

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

Cited by 15 publications

References 3 publications

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

The Influence of AlGaN/GaN Heteroepitaxial Structure Fractal Geometry on Size Effects in Microwave Characteristics of AlGaN/GaN HEMTs

Changes in the characteristics of semiconductor structures of microwave amplifiers under the action of pulsed laser radiation

Nature of size effects in compact models of field effect transistors

Contact Info

Product

Resources

About