AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.; Alam, A.; Wolter, M.; Fox, A.; Marso, Michel; Heuken, M.; Lüth, H.; Kordoš, P.

doi:10.1109/55.974794

Cited by 84 publications

(43 citation statements)

References 10 publications

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“…K) for nitride devices. 10,11 Different orientations of Si were studied for GaN HEMT by various research groups to investigate efficient power device platforms. Boulay et al 12 demonstrated GaN HEMTs on (001) oriented Si substrate for microwave power application.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

et al. 2017

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“…An 800 nm GaN buffer layer is followed by a 6 nm thick undoped AlGaN spacer, 20 nm Si-doped carrier supply layer, and 6 nm un- /Vs, respectively. Details of growth and device fabrication are given elsewhere [4]. Device processing consists of conventional HEMT fabrication steps.…”

Section: Device Fabricationmentioning

confidence: 99%

“…Recently Si has been found a useful alternative because of its low cost and good thermal conductivity. AlGaN/GaN/Si HEMTs with unity current gain frequencies comparable to those known for devices using sapphire and SiC substrates have been reported [1]. In contrast to sapphire the electrical conductivity of the Si substrate allows the application of a voltage at the back side of the devices through a substrate contact.…”

mentioning

confidence: 92%

Investigation of AlGaN/GaN HEMTs on Si Substrate Using Backgating

Marso

Wolter

Javorka

et al. 2002

phys. stat. sol. (c)

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The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN HEMT on silicon (111) substrate is investigated. This effect, known as backgating, is used to study traps that are located between substrate and 2DEG channel. The transient of the drain current after applying a negative substrate voltage is evaluated for measurements with and without illumination. Several trap contributions are resolved by measurements at different photon energies. A photocurrent is observed up to 600 nm wavelength. Up to this wavelength the backgating effect can be compensated and the drain current restored by a short light pulse. The experiments are performed on completed HEMTs, allowing investigation of the influence of device fabrication technology.

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“…Many concur that most of the reliability-limiting mechanisms and issues are related to the presence of defect states in the forbidden band-gap of GaN, and the subsequent performance degradation associated with such defects. [3][4][5][6][7][8] Drain-current transient analysis experiments have helped shed light on the degradation observed in switching performance, often manifesting in AlGaN/GaN HEMTs as gate lag, drain lag and current collapse. 9,10 The collapse is attributed to electron trapping comprised of lateral and vertical components.…”

mentioning

confidence: 99%

Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current

Mukherjee

Patrick

Law

2017

ECS J. Solid State Sci. Technol.

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AlGaN/GaN high electron mobility transistors for high efficiency power switching applications are susceptible to charge trapping by deep-levels in the GaN buffer resulting in current collapse during gate and drain voltage swings. Although drain-current transient based methodologies have been used consistently to extract trap parameters, the factors affecting the non-exponential nature of the transient are still not well understood. No effort at accurately replicating multiple deep-levels in the GaN buffer to simulate transient response of GaN based power devices has been reported previously. In this work, we present numerical simulation results of HEMTs having multiple discrete trap states as well as band-like distribution of traps in the GaN band-gap. GaN based High Electron Mobility Transistors (HEMT)s, which leverage wide-band-gap related properties, are established as ideal candidates for high-power, high-efficiency and high-frequency applications ranging from RF communication to power conversion. 1,2However, the most unremitting technological challenge limiting the wide-spread adoption of GaN process technology is understanding and predicting their reliability and degradation modes therein. Many concur that most of the reliability-limiting mechanisms and issues are related to the presence of defect states in the forbidden band-gap of GaN, and the subsequent performance degradation associated with such defects. [3][4][5][6][7][8] Drain-current transient analysis experiments have helped shed light on the degradation observed in switching performance, often manifesting in AlGaN/GaN HEMTs as gate lag, drain lag and current collapse.9,10 The collapse is attributed to electron trapping comprised of lateral and vertical components. The lateral component due to tunneling of electrons from the gate to surface states at the AlGaN/insulator interface is facilitated by large bias difference between the gate and drain (under off-state and high drain bias).11-13 However, this phenomenon has been observed to be suppressed by improved passivation techniques.13 Under similar bias conditions, a vertical trapping component, which deteriorates dynamic performance, dominates in devices with improves passivation. The mechanism is expected to involve injection of 2DEG electrons deeper into the buffer and consequent trapping for several buffer designs. [8][9][10][11][12][13] If the traps directly underneath the gate dominate, a shift in dynamic threshold is observed. However, if the traps in the drain access region dominate, they end up depleting the 2DEG in this region thereby increasing the dynamic on-resistance.Much of experimental work identifying GaN buffer traps responsible for deterioration of dynamic performance utilize thermal dependence of the relaxation time constants to extract trap activation energy.11,14 Current relaxation time constants are obtained by taking the derivative of such transients and typically indicate the presence of multiple trapping centers. The extracted derivatives assume an asymmetric shape, with ...

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AlGaN/GaN HEMTs on (111) silicon substrates

Cited by 84 publications

References 10 publications

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

Investigation of AlGaN/GaN HEMTs on Si Substrate Using Backgating

Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current

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