AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles

Lee, Jong Won; Ha, Gyeongwon; Park, Jeong-Hyeon; Song, Hyun Gyu; Park, Jae Yong; Lee, Jae Yong; Cho, Yong-Hoon; Lee, Jong‐Lam; Kim, Jin Kon; Kim, Jong Kyu

doi:10.1021/acsami.0c08916

Cited by 27 publications

(14 citation statements)

References 34 publications

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“…Over the last few decades, several new nanophotonic devices based on the LSPR have been developed including various types of optical modulators, for example, filters, [270,271] diffusers, [244,272,273] polarizers, [274,275] and wavelength (down or up) converters, [62,276,277] as well as components of optoelectronic devices including lasers, [61,276,[278][279][280] light-emitting diodes, [281][282][283][284] photodetectors, [285][286][287][288] and photovoltaics. [289][290][291] The advance in nanofabrication including GLAD helps to not only improve their performance, but also diversify the application domains ranging from high-end electronics to consumer products.…”

Section: Nanophotonic Devicesmentioning

confidence: 99%

Plasmonic Nanostructure Engineering with Shadow Growth

Han

Kim

et al. 2022

Advanced Materials

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Physical shadow growth is a vacuum deposition technique that permits a wide variety of 3D‐shaped nanoparticles and structures to be fabricated from a large library of materials. Recent advances in the control of the shadow effect at the nanoscale expand the scope of nanomaterials from spherical nanoparticles to complex 3D shaped hybrid nanoparticles and structures. In particular, plasmonically active nanomaterials can be engineered in their shape and material composition so that they exhibit unique physical and chemical properties. Here, the recent progress in the development of shadow growth techniques to realize hybrid plasmonic nanomaterials is discussed. The review describes how fabrication permits the material response to be engineered and highlights novel functions. Potential fields of application with a focus on photonic devices, biomedical, and chiral spectroscopic applications are discussed.

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Section: Nanophotonic Devicesmentioning

confidence: 99%

Plasmonic Nanostructure Engineering with Shadow Growth

Han

Kim

et al. 2022

Advanced Materials

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“…QWs with emission wavelengths in the UV range are fabricated by alloying AlN with GaN [ 65 ]. UV-LEDs based on AlGaN QWs that have many applications in sensing, phototherapy, biological detection, sterilization, optical catalysis, and air/water purification, also suffer from low EQE [ 66 , 67 , 68 , 69 ]. The increased concentration of Al in AlGaN QWs results in poor doping efficiencies and crystal quality that limit the IQE of such LEDs [ 68 , 70 , 71 ].…”

Section: State-of-the-art and Challengesmentioning

confidence: 99%

“…UV-LEDs based on AlGaN QWs that have many applications in sensing, phototherapy, biological detection, sterilization, optical catalysis, and air/water purification, also suffer from low EQE [ 66 , 67 , 68 , 69 ]. The increased concentration of Al in AlGaN QWs results in poor doping efficiencies and crystal quality that limit the IQE of such LEDs [ 68 , 70 , 71 ]. Both the transverse magnetic (TM) and transverse electric (TE) polarized emissions are produced in active layers of UV-LEDs where only the TE mode can escape the device structure [ 72 ].…”

Section: State-of-the-art and Challengesmentioning

confidence: 99%

“…The penetration depth for the SP fringing field produced by Al can also be calculated in the UV range by using Equation (1). J. W. Lee et al have recently reported the SP enhancement in an AlGaN MQW-LED using uniformly distributed AlNPs of average ~40 nm diameter obtained by block copolymer lithography [ 68 ]. By using the finite difference time domain (FDTD) simulation, they found that strong LSP resonance coupling could be achieved by using small AlNPs on ultrathin p-GaN.…”

Section: Factors Affecting Sp–qw Coupling Enhancement In Nitride-based Ledsmentioning

confidence: 99%

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Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

et al. 2021

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Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP–QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP–QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP–QW coupling have been explained in detail based on recent reports devoted to this field.

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“…Based on the above methods, LEE can be effectively extracted. In addition, it is reported by Lee et al in 2020 that the internal quantum efficiency is enhanced by 57.7% due to the LSPs for the Al nanospheres adjacent to the active region [15]. Furthermore, the DUV-LEDs are also used in light communications [16,17].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres

Tang

et al. 2022

Crystals

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Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method. The three types of DUV-LEDs were compared and analyzed in terms of light extraction efficiency (LEE), Purcell factor (FP) and modulation bandwidth. The results showed that nanopillar structure DUV-LEDs with optimal nanopillar height, width and spacing can enhance transverse electric (TE)-polarized LEE to 39.7% and transverse magnetic (TM)-polarized LEE to 4.4%. The remarkable improvement was mainly due to the increased scattering effect, decreased absorption of the p-GaN layer and total internal reflection (TIR) effect. After adopting the Al nanospheres, the TE-polarized modulation bandwidth was increased by 71 MHz and the TM-polarized LEE was enhanced approximately 4.3-fold as compared to the nanopillar LED structure, while the Al nanosphere diameter was 120 nm. The reasons for promotion are mainly attributed to the coupling behavior of diploe and localized surface plasmon induced by Al nanospheres. The designed structures provide a meaningful solution for realization of high-efficiency DUV-LEDs.

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AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles

Cited by 27 publications

References 34 publications

Plasmonic Nanostructure Engineering with Shadow Growth

Plasmonic Nanostructure Engineering with Shadow Growth

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances

Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres

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