2022
DOI: 10.3390/cryst12020289
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Enhanced Light Extraction Efficiency and Modulation Bandwidth of Deep-Ultraviolet Light-Emitting Diodes with Al Nanospheres

Abstract: Planar, nanopillar and Al nanosphere structure AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were numerically investigated via a three-dimensional finite difference time domain (3D FDTD) method. The three types of DUV-LEDs were compared and analyzed in terms of light extraction efficiency (LEE), Purcell factor (FP) and modulation bandwidth. The results showed that nanopillar structure DUV-LEDs with optimal nanopillar height, width and spacing can enhance transverse electric (TE)-polarized LEE t… Show more

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Cited by 4 publications
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“…For DUV LEDs (wavelengths between 250 nm and 300 nm), EQE values are below 10% [6]. As an important factor of EQE, the light-extraction efficiency (LEE) is as low as 9% without any assisted light extraction [7,8]. The main reason for low LEE is the refractive index contrast between the chip and the environment [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…For DUV LEDs (wavelengths between 250 nm and 300 nm), EQE values are below 10% [6]. As an important factor of EQE, the light-extraction efficiency (LEE) is as low as 9% without any assisted light extraction [7,8]. The main reason for low LEE is the refractive index contrast between the chip and the environment [9,10].…”
Section: Introductionmentioning
confidence: 99%