AlGaN/AlN/GaN high-power microwave HEMT

Shen, Li; Heikman, S.; Moran, B.; Coffie, R.; Zhang, N.-Q.; Buttari, D.; Smorchkova, I. P.; Keller, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1109/55.954910

Cited by 435 publications

(234 citation statements)

References 8 publications

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“…The large direct band-gap and good thermal stability properties of the GaN and related materials has enabled their potential use in applications for laser diodes (LDs), visible-blind ultraviolet (UV) detectors, and short-wave light-emitting diodes (LEDs) [1][2][3][4]. However, there is still a lack of a suitable substrate for GaN-based devices to fully exploit their superior properties.…”

Section: Introductionmentioning

confidence: 99%

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

et al. 2008

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In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of substrate at different nitiridation times ranging from 0 to 660 s. The structural characteristics, such as dislocation densities, correlation lengths of columnar crystallites, the tilt and twist of the mosaic structure, and the angles of rotational disorder, were all studied in detail by using a planar and cross-sectional view of high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (HRXRD) performed at different scattering geometries. It was found that the dislocation densities, lateral coherence lengths, vertical coherence lengths, and the tilt and

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Section: Introductionmentioning

confidence: 99%

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

et al. 2008

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“…Next, we have argued that the surface behavior of DHFET structure is quite similar to the surface behavior of conventional AlGaAs/GaAs HEMT (see Fig. 1 (b)) structure [7]. We have provided necessary band diagrams and charge profiles at different bias conditions to justify our claim.…”

Section: Introductionmentioning

confidence: 66%

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Khan¹

2013

JEEE

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Abstract:We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a nonlinear expression for Fermi level (E F ) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (n s ) variation with gate voltage (V G ) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.

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“…[1][2][3][4] The electron mobility for the two-dimension electron gas (2DEG) is a very important parameter which directly affects the frequency characteristics and power characteristics of AlGaN/GaN HFETs. In the former researches, Zhao 5 and Lv 6 found that the polarization Coulomb field scattering has an important influence on the 2DEG electron mobility for both AlGaN/GaN HFETs and AlGaN/AlN/GaN HFETs, Lv 7 pointed out that the polarization Coulomb field scattering as a dominant scattering mechanism is determined by the ratio of gate length to drain-to-source distance in AlGaN/AlN/GaN HFETs.…”

Section: Introductionmentioning

confidence: 99%

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Lin

Chen

et al. 2013

AIP Advances

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Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG) sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher

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AlGaN/AlN/GaN high-power microwave HEMT

Cited by 435 publications

References 8 publications

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

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