AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy

Stellini, E. M.; Cheng, K. Y.; Pearah, P. J.; Chen, A. C.; Moy, A. M.; Hsieh, K. C.

doi:10.1063/1.108932

Cited by 31 publications

(6 citation statements)

References 8 publications

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“…Structures with multiple layers of quantum wires ͑QWRs͒ grown by the strain-induced lateral-layer ordering ͑SILO͒ process have resulted in the spatial alignment of wires along the ͓100͔ direction. 1 This is similar to what has been observed in both SiGe structures 2 and III-V based quantum dots ͑QDs͒ with multiple dot layers. 3,4 This alignment is due to the fact that as the barrier material is deposited on a QWR or QD layer it must adapt to a growth front with a composition and/or a lattice constant that varies across the growth plane.…”

Section: Introductionsupporting

confidence: 84%

Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires

Wohlert

Change

Pickrell

et al. 2001

Journal of Applied Physics

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The strain-induced lateral-layer ordering process was used to fabricate GaInAs quantum wire ͑QWR͒ heterostructures on InP whose QWR layers are separated by different barrier materials. Using cross-sectional transmission electron microscopy the microstructure of the different QWR samples was studied. It was found that GaInAs QWR heterostructures with nominally lattice matched AlGaInAs barriers resulted in heavily strained QWR regions relative to the same structure with nominally lattice matched AlInAs or InP barriers. Furthermore, photoluminescence studies demonstrate that these heavily strained QWR samples with AlGaInAs barriers have a wavelength-shift rate of 0.2 to 1.0 Å/°C in the 293-360 K range. This is in comparison to GaInAs QWR samples with ternary or binary barriers and a GaInAs quantum well control sample that have wavelength-shift rates of ϳ2.5 and ϳ6.0 Å/°C, respectively. It is shown empirically that a minimum amount of strain in the GaInAs QWR/AlGaInAs barrier region is required to achieve wavelength-shift rates below 1 Å/°C.

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Section: Introductionsupporting

confidence: 84%

Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires

Wohlert

Change

Pickrell

et al. 2001

Journal of Applied Physics

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“…These QWRs further exhibit good potential for applications in optoelectronics such as for light-emitting diodes, high-speed optical switches, and low-threshold, high-gain QWR lasers. 10,15 In a previous study, we used CL techniques to examine the nonlinear optical properties of ͑InP͒ 2 /͑GaP͒ 2 BSLs on GaAs͑001͒ substrates grown by metal-organic chemical vapor deposition ͑MOCVD͒. [12][13][14] The combination of linearly polarized CL spectroscopy, CL imaging and time-resolved CL enabled a study of the nonlinear optical properties and carrier relaxation kinetics in the QWR structure.…”

Section: Introductionmentioning

confidence: 99%

Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires

Tang¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Phase separation in III–V semiconductors has led to a unique method for fabricating quantum wires via a strain induced lateral ordering process. Quantum wire (QWR) arrays were formed during the gas source molecular beam epitaxial (MBE) growth of (InP)2/(GaP)2 bilayer superlattices (BSLs) and were studied by time-resolved and linearly polarized cathodoluminescence. Nonlinear optical properties, such as phase-space filling effects, were observed to be indicative of the QWR nature of the samples. Samples prepared by gas source MBE were found to have a greater uniformity, smaller QWRs, and higher optical quality in comparison to those obtained by metal–organic chemical vapor deposition. Misfit dislocations also formed in one of the BSL samples, indicating a partial strain relaxation at the GaAs/InGaP and BSL/InGaP interfaces. The carrier relaxation, transport, and collection in the QWRs were studied with time-resolved cathodoluminescence.

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“…Spontaneous growth induced ordering in ternary compound has become a topic of increasing interest because of the enhanced optical and electrical properties of improved quantum confinement and reduced alloy scattering that have been observed, [1][2][3][4] and because of its potential device applications. Most of the studies were focused on GaInP quantum wire lasers and InGaAs modulation doped heterostructures; however, the growth of AlGaAs is particularly important for most III-V device applications.…”

mentioning

confidence: 99%

Spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice and strong enhancement of optical properties

Chin¹,

Hsieh

Lin³

1994

Applied Physics Letters

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Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.

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AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy

Cited by 31 publications

References 8 publications

Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires

Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires

Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires

Spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice and strong enhancement of optical properties

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