Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires

Tang, Yuchun

doi:10.1116/1.589388

Cited by 8 publications

(2 citation statements)

References 25 publications

(59 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 InP/GaP, being one of the material combinations which spontaneously constructs the SL under specific conditions, has been subject to numerous experimental works 15,16,17 including cathodoluminescence experiments 18,19,20 and studies on the influence of pressure, SL period and barrier thickness 21,22,23 on the optical transitions. Likewise GaAs/GaP 24,25 and GaAs/AlAs 26,27,28,29,30,31,32 have also been extensively investigated in the past.…”

mentioning

confidence: 99%

Linear and second-order optical response of III-V monolayer superlattices

2003

View full text Add to dashboard Cite

We report the first fully self-consistent calculations of the nonlinear optical properties of superlattices. The materials investigated are mono-layer superlattices with GaP grown on the the top of InP, AlP and GaAs (110) substrates. We use the full-potential linearized augmented plane wave method within the generalized gradient approximation to obtain the frequency dependent dielectric tensor and the second-harmonic-generation susceptibility. The effect of lattice relaxations on the linear optical properties are studied. Our calculations show that the major anisotropy in the optical properties is the result of strain in GaP. This anisotropy is maximum for the superlattice with maximum lattice mismatch between the constituent materials. In order to differentiate the superlattice features from the bulk-like transitions an improvement over the existing effective medium model is proposed. The superlattice features are found to be more pronounced for the second-order than the linear optical response indicating the need for full supercell calculations in determining the correct second-order response.

show abstract

mentioning

confidence: 99%

Linear and second-order optical response of III-V monolayer superlattices

2003

View full text Add to dashboard Cite

show abstract

“…4 The chemical phase separation during the growth and synthesis of strained ternary semiconductors can yield additional quantum effects if the spatial modulation is less than ϳ10 nm, and possibly provide for additional device applications such as, e.g., the spontaneous formation of quantum wires during the growth of ͑InP͒ 2 / ͑GaP͒ 2 bilayer superlattices on GaAs. [5][6][7] Chemical phase separation within ternary II-VI crystals is a rare phenomenon, but has been predicted and observed. 8 Using highresolution transmission electron microscopy ͑TEM͒, a spinodal-like phase separation was observed for Cd x Zn 1−x Te layers grown on GaAs substrates.…”

mentioning

confidence: 99%

Carrier relaxation dynamics of ZnxCd1−xSe/C core/shell nanocrystals with phase separation as studied by time-resolved cathodoluminescence

Estrin¹,

Rich²,

Moshe³

et al. 2009

Appl. Phys. Lett.

View full text Add to dashboard Cite

The optical properties and carrier relaxation kinetics of Zn x Cd 1−x Se/ C core/shell nanocrystals with compositional phase separation occurring on a ϳ1-5 nm size scale were examined with time-resolved cathodoluminescence ͑CL͒ spectroscopy and imaging. The CL spectral lineshape was found to depend on the level of excitation, temperature, and the time-window during time-delayed spectroscopy. The kinetics of carrier thermalization and transfer between Cd-rich phase-separated regions and the homogenous ZnCdSe alloy were examined. We show that the rare phenomenon of compositional phase separation in II-VI nanocrystals leads to interesting and potentially useful optical properties.

show abstract

Electron Microscopy of Nanoledges at the (001)InAs/(001)GaAs Interface for an Approximate Orientation Relationship

Youssef

Fnaiech

Chen

et al. 1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

The structure of the InAs/GaAs(001) epitaxial heterointerface is observed by high resolution electron microscopy (HREM) along [110] when there is a slight long range angular misorientation between the two crystals around the common observation direction. The lattice misfit and the local misorientation (η = 6.9%, Δθ = 1.5°) are simultaneously accommodated via a non planar and non pseudoperiodic distribution of defects involving usual 90° and 60° dislocation cores and yet unreported nanoledges with exotic Burgers vector contents. One of these nanoledges is five (001) planes high and has a total Burgers vector content equal to (1/6)[33‐1]. Its local elastic field has been analysed in terms of ribbon‐like Somigliana dislocations. It depends on η, Δθ and its nanoledge height. Comparisons between the experimental and calculated tunnel positions between atom columns are given to appreciate the validity of the model.

show abstract

Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires

Cited by 8 publications

References 25 publications

Linear and second-order optical response of III-V monolayer superlattices

Linear and second-order optical response of III-V monolayer superlattices

Carrier relaxation dynamics of ZnxCd1−xSe/C core/shell nanocrystals with phase separation as studied by time-resolved cathodoluminescence

Electron Microscopy of Nanoledges at the (001)InAs/(001)GaAs Interface for an Approximate Orientation Relationship

Contact Info

Product

Resources

About