AlGaInN Quaternary Alloys by MOCVD

McIntosh, F. G.; Piner, Edwin L.; Boutros, K. S.; Roberts, John C.; He, Yanbo; Moussa, M.; El‐Masry, N. A.; Bedair, S. M.

doi:10.1557/proc-395-219

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…[9] First, DCXRD was used to determine the lattice constants of the ternary and quaternary films when grown separately. The InGaN layer contained 12% InN and the AlInGaN was the same growth conditions as the film shown in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Piner¹,

McIntosh

Roberts

et al. 1996

MRS Internet j. nitride semicond. res.

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High quality InGaN films have led to the development of LEDs and blue lasers. The quaternary AlInGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report on such films grown on (0001) sapphire substrates in an atmospheric pressure MOCVD reactor at 750-800°C. The ternary films have a composition of up to 40% InN and the quaternary films were grown in the composition range of 0 to 20% AlN and 0 to 20% InN. The quaternary compositions studied by EDS and the lattice constants from double crystal XRD followed Vegard's law indicating solid solubility for the range studied. Room temperature PL is dominated by band edge emission for InGaN and AlInGaN, at low AlN%. Higher AlN alloys of AlInGaN had PL dominated by deep levels. AlInGaN/InGaN and AlGaN/InGaN heterostructures were grown with abrupt interfaces. We emphasize the most important growth parameters for the growth of high quality ternary and quaternary thin films. The structural, electrical and optical properties of these In-based ternary and quaternary films and their lattice matched and strained heterostructures will also be presented.

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Section: Resultsmentioning

confidence: 99%

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Piner¹,

McIntosh

Roberts

et al. 1996

MRS Internet j. nitride semicond. res.

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Chapter 6 Indium-based Nitride Compounds

Bedair

1997

Semiconductors and Semimetals

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Limitations to band gap tuning in nitride semiconductor alloys

Gorczyca

Suski

Christensen

et al. 2010

Applied Physics Letters

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Relations between the band gaps of nitride alloys and their lattice parameters are presented and limits to tuning of the fundamental gap in nitride semiconductors are set by combining a large number of experimental data with ab initio theoretical calculations. Large band gap bowings obtained theoretically for GaxAl1−xN, InxGa1−xN, and InxAl1−xN for uniform as well as clustered arrangements of the cation atoms are considered in the theoretical analysis. It is shown that indium plays a particular role in nitride alloys being responsible for most of the observed effects.

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AlGaInN Quaternary Alloys by MOCVD

Cited by 3 publications

References 5 publications

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Chapter 6 Indium-based Nitride Compounds

Limitations to band gap tuning in nitride semiconductor alloys

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