AlGaInN high-power lasers grown on an ELO-GaN layer

Takeya, M.; Yanashima, Katsunori; Asano, T.; Hino, T.; Ikeda, S.; Shibuya, Katsuyoshi; Kijima, Satoru; Tojyo, T.; Ansai, Shinichi; Uchida, Shiro; Yabuki, Yoshifumi; Aoki, Tsuneyoshi; Asatsuma, Tsunenori; Ozawa, M.; Kobayashi, Tsutomu; Morita, Etsuo; Ikeda, Masao

doi:10.1016/s0022-0248(00)00793-4

Cited by 26 publications

(12 citation statements)

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“…The details of the growth procedure and laser fabrication process are described elsewhere [9,10]. A schematic cross-section of the fabricated BV-LD on ELO-GaN/sapphire is illustrated in Fig.…”

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confidence: 99%

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High‐power GaN‐based semiconductor lasers

Ikeda¹,

Mizuno²,

Takeya³

et al. 2004

phys. stat. sol. (c)

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PACS 42.55.Px, 42.60.Lh, 78.66.Fd, 81.05.Ea, 81.15Gh GaN-based blue-violet lasers with a kink-free output power of higher than 150 mW have been successfully realized by adopting a new ridge structure and appropriately designing the beam divergence. The new ridge structure is a narrow 1.4 µm ridge covered with a stacked layer of Si on SiO 2 and the beam divergence half-angles parallel and perpendicular to the junction plane are set at 8° and 21°, respectively. These lasers have been operating stably for more than 500 h under 130-mW pulsed operation at 60 °C. The empirical activation energy of device lifetime under 30-mW continuous-wave operation is 0.32 eV.Introduction GaN-based high-power blue-violet laser diodes (BV-LDs) operating in the 400-410 nm wavelength band are promising light sources for large-capacity optical storage systems. The characteristics of BV-LDs have been improved remarkably since Nakamura et al. reported the first roomtemperature continuous-wave (CW) operation in 1996 [1]. Reliable BV-LDs with estimated lifetimes exceeding 10,000 h under 30-mW CW operation at 60 °C have been realized in recent years [2][3][4]. Although these devices can be readily used in high-density digital video recording systems [5], reliable BV-LDs capable of much higher output power will be required in the near future as the technology for optical disk systems extends to multi-layer disks and higher data transfer rates to facilitate higher densities and higher recording speeds.In designing a high-power laser suitable for use in optical disk systems, it is essential to maintain both a high kink level and a high catastrophic optical damage (COD) level of output power. These two levels are closely related to the optical confinement in the stripe of the laser structure, and hence to the beam divergence angles. The lifetime of BV-LDs is also governed by the density of dislocations within the stripe [6]. The stripes of current lasers typically contain significantly less than 100 dislocations, reduced from previously much higher numbers through the use of dislocation-reduction techniques such as epitaxial lateral overgrowth (ELO) [7,8], and lifetimes of over 1,000 h at 60 °C have already been achieved. However, even one dislocation in a stripe causes rapid degradation in other III-V laser diodes such as AlGaAs, GaInAsP and AlGaInP lasers. The remarkably long lifetimes and resilient nature of GaN-based lasers is therefore apparently associated with the inherent rigidity of this material system.In this paper, the kink and COD levels of a laser structure optimized for obtaining high output powers of more than 100 mW are described with reference to the most important device parameters. The dependence of the lifetime of these high-power lasers on the ambient temperature and output power are also reported.

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“…The wing width of the ELOGaN was 18 µm. The total thickness of the GaN-based epitaxial layers was limited to 7 µm in order to minimize wafer bending, important in achieving precise alignment of the laser stripe [9]. The ridge depth was carefully controlled so as to yield an appropriate difference of refractive index in the lateral direction (∆n).…”

mentioning

confidence: 99%

High‐power GaN‐based semiconductor lasers

Ikeda¹,

Mizuno²,

Takeya³

et al. 2004

phys. stat. sol. (c)

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“…The ELO-GaN sample was grown on a sapphire sub- strate using metal organic chemical vapor deposition (MOCVD). The growth conditions have been reported elsewhere [2]. Two samples, sample A and sample B, were used in this experiment.…”

Section: Methodsmentioning

confidence: 99%

“…This difference reflects the difference in threading dislocation (TD) density and the grain size. Using plan-view TEM observation, the TD density was estimated to be 10 6 -10 7 cm -2 in the wing region and 10 8 -10 9 cm -2 in the seed region [2]. The main cause of the rocking curves' narrowing, which means the decreasing of tilting component, is the reduction in the density of mixed and screw dislocations which comprise 10% of total TD density [7].…”

Section: Methodsmentioning

confidence: 99%

“…1 Introduction By growing a GaN-based laser diode (LD) on epitaxially laterally overgrown GaN (ELO-GaN) [1,2], Tojyo et al demonstrated a practical lifetime of 15000 h with an output power of 30 mW at a temperature of 60 °C [3]. ELO-GaN strongly contributed to this performance by reducing the threading dislocation (TD) density to 10 6 cm -2 and providing a smooth cleaved facet.…”

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Structure analysis of ELO‐GaN using a 2 × 4 μm² micro‐beam X‐ray of an 8‐GeV storage ring

Miyajima

Takeya

Goto

et al. 2003

Physica Status Solidi (b)

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PACS 81.05.Ea, 81.15.Gh We investigated the micrometer-scale structure of epitaxially laterally overgrown GaN (ELO-GaN) using a 2 × 4 µm 2 micro-beam X-ray of an 8-GeV storage ring. The GaN (0 0 0 12) rocking curve of the wing region had a sharp peak with a FWHM of 46 arcsec, but that of the seed region had several broad peaks. This peak-narrowing corresponds to the reduction of the threading dislocation (TD) density and to the increase of grain size. The grain in the wing region was typically 5 µm × 5 µm and extended along the ELO stripe of GaN 〈1100〉. On the other hand, a larger grain with a 10 µm × 10 µm was observed in the wing region of another ELO-GaN sample which did not coalesce during the growth. We conclude that the homogeneity of the GaN c-surface tilting can be declined by coalescence of the wing regions. We believe that this inhomogeneity of the GaN c-surface tilting and the grain size strongly affect the performance of GaN-based laser diodes grown on ELO-GaN. Moreover, GaN c-surface tilting of 81.5 arcsec was observed in the wing region of ELO-GaN although no SiO 2 mask was used.

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III‐VCompound Semiconductor Optoelectronic Devices

Mokkapati

Jagadish

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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AlGaInN high-power lasers grown on an ELO-GaN layer

Cited by 26 publications

References 11 publications

High‐power GaN‐based semiconductor lasers

High‐power GaN‐based semiconductor lasers

Structure analysis of ELO‐GaN using a 2 × 4 μm² micro‐beam X‐ray of an 8‐GeV storage ring

III‐VCompound Semiconductor Optoelectronic Devices

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AlGaInN high-power lasers grown on an ELO-GaN layer

Cited by 26 publications

References 11 publications

High‐power GaN‐based semiconductor lasers

High‐power GaN‐based semiconductor lasers

Structure analysis of ELO‐GaN using a 2 × 4 μm2 micro‐beam X‐ray of an 8‐GeV storage ring

III‐VCompound Semiconductor Optoelectronic Devices

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Structure analysis of ELO‐GaN using a 2 × 4 μm² micro‐beam X‐ray of an 8‐GeV storage ring