AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

Ruden, P.P.; Shur, M. S.; Akinwande, A.I.; Nohava, J.C.; Grider, David; Baek, J.

doi:10.1109/16.59906

Cited by 32 publications

(6 citation statements)

References 9 publications

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“…In order to increase n s , we are now proposing a doped channel approach, similar to that used in doped channel AlGaAs/GaAs heterostructures. 4 In AlGaN/GaN structures, such an approach is even more advantageous since the additional impurity scattering has less of an effect in GaN than in GaAs, due to a much higher electron effective mass in GaN. As shown below, channel doping also dramatically reduces the contact resistance.…”

Section: ͓S0003-6951͑96͒04521-4͔mentioning

confidence: 99%

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

Khan

Shur

Chen

1996

Applied Physics Letters

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Section: ͓S0003-6951͑96͒04521-4͔mentioning

confidence: 99%

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

Khan

Shur

Chen

1996

Applied Physics Letters

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“…Heterojunction field effect transistors (HFETs) based on AlGaAs/InGaAs/GaAs and AlInAs/InGaAs/InP material systems are well known to have an excellent microwave and millimetre wave performance, and thus they have been extensively studied [1][2][3][4][5][6][7][8][9][10][11]. The standard HFET (a socalled PHEMT) [2] with a single top delta doping layer generally gives rise to a high electron mobility, high electron saturation velocity and a low minimum noise figure. A double delta-doped [4,11] or uniform-doped channel design [1,5] is preferred to achieve larger carrier concentration and therefore higher drain current capability and hence larger output power.…”

Section: Introductionmentioning

confidence: 99%

“…The standard HFET (a socalled PHEMT) [2] with a single top delta doping layer generally gives rise to a high electron mobility, high electron saturation velocity and a low minimum noise figure. A double delta-doped [4,11] or uniform-doped channel design [1,5] is preferred to achieve larger carrier concentration and therefore higher drain current capability and hence larger output power. On the other hand, double delta-doped or uniform-doped channel transistors usually suffer from lower electron mobilities.…”

Section: Introductionmentioning

confidence: 99%

Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs

Nawaz¹,

Miranda²,

Sakalas³

et al. 2000

Semicond. Sci. Technol.

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We report on design, processing and characterization of AlGaAs/InGaAs/GaAs HFETs which feature the power capabilities of double delta-doped devices and the low noise performance of the standard HFETs. To study the influence of delta doping position on the subband energies and sheet charge density, numerical simulations based on a self-consistent solution of Poisson's and Schrödinger's equations have been used for different channel thicknesses. Three different devices with a single δ-doped layer located at three different positions inside the channel have been fabricated and tested. On-wafer noise measurements have revealed that the position of the delta-doped layer can be optimized to minimize the noise figure without any relevant degradation of the maximum transconductance. The device with the delta-doped layer closer to the bottom heterointerface was found to exhibit the best performance in terms of the maximum cutoff and maximum oscillation frequencies and the minimum noise figure.

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“…This is seen immediately from a self-consistent solution of the coupled Schroedinger and Poisson equations. [7,8] By calculating the quasi-two-dimensional subband structure in this way and subsequently estimating the effective thickness as (1) the result shown in Figure 2 is obtained. Here n(z) is the total (three-dimensional) free electron density which is related to the (two-dimensional) channel carrier density by n s = .…”

Section: Device Model and Key Parametersmentioning

confidence: 99%

Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

Ruden

Albrecht

Sutandi

et al. 1999

MRS Internet j. nitride semicond. res.

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Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1 m gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

Cited by 32 publications

References 9 publications

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs

Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

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