ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

Aydin, Sefa B K; Yıldız, D. E.; Çavuş, Hatice Kanbur; Şahıngöz, Recep

doi:10.1007/s12034-014-0726-6

Cited by 32 publications

(17 citation statements)

References 26 publications

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“…For this purpose, the wafer was cleaned with trichloroethylene, acetone and methanol. Then, the surface of Si were etched in H 2 SO 4 +H 2 O 2 +H 2 O (5:1:1), 20% HF, HNO 3 + HF + H 2 O (6:1:35) and 20% HF, consecutively [20]. After each step, the wafer was rinsed by deionized water with high resistivity.…”

Section: Methodsmentioning

confidence: 99%

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

2017

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The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene-SiO 2 nanocomposite (PTh-SiO 2) interlayer were investigated. The ideality factor of Al/PTh-SiO 2 /p-Si Schottky diodes has decreased with increasing temperature and the barrier height has increased with increasing temperature. The change in the barrier height and ideality factor values with temperature was attributed to inhomogeneties of the zero-bias barrier height. Richardson plot has exhibited curved behaviour due to temperature dependence of barrier height. The activation energy and effective Richardson constant were calculated as 0.16 eV and 1.79 × 10 −8 A cm −2 K −2 from linear part of Richardson plots, respectively. The barrier height values determined from capacitance-voltage-temperature (C-V-T) measurements decrease with increasing temperature on the contrary of barrier height values obtained from I-V-T measurements.

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Section: Methodsmentioning

confidence: 99%

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

2017

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“…Before deposition steps, ultrasonic and chemical substrate cleaning procedures by organic solvents of CHClCCl 2 , CH 3 COCH 3 and CH 3 OH were applied for 10 min. Following to the cleaning, the surfaces of the SiC substrates were etched in a sequence of H 2 SO 4 , H 2 O 2 −HF (20%), HF (20%), a solution of 6HNO 3 :1HF:35H 2 O and finally rinsed in 18 M .cm deionized water [26][27][28][29]. Then, under 10 −7 mbar vacuum condition, highly pure (99.999%) Au metal source was thermally evaporated to form ohmic back contacts for the substrates [30].…”

Section: Methodsmentioning

confidence: 99%

Influence of $$\hbox {Si}_{3}\hbox {N}_{4}$$ Si 3 N 4 layer on the electrical properties of Au/n-4H SiC diodes

2018

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In this study, the effect of Si 3 N 4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current-voltage (I −V), capacitance-voltage (C−V) and conductance-voltage (G/w−V) measurements were carried out at room temperature condition. Under thermionic emission model, electrical parameters as zero-bias barrier height (Bo), ideality factor (n), interface states (D it), and series (R s) and shunt (R sh) resistances were estimated from forward bias I −V analyses. The values of n and Bo were about 1.305 and 0.796 eV for metal-semiconductor (MS) rectifying diode, and 3.142 and 0.713 eV for metal-insulator-semiconductor (MIS) diode with the insertion of Si 3 N 4 layer, respectively. Since the values of n were greater than the unity, the fabricated diodes showed non-ideal I −V behaviour. The energy distribution profile of D it of the diodes was calculated by taking into account of the bias dependence of the effective barrier height (e) and R s. The obtained D it values with R s are almost one order of magnitude lower than those without R s for two diodes. According to Cheung's model, R s were calculated and these values were found in increasing behaviour with the contribution of Si 3 N 4 insulator layer. In addition, the J R −V plot behaviours with linear dependence between ln(J R) vs. V 0.5 indicated that the dominant conduction mechanism in the reverse bias region was Schottky effect for both MS and MIS diodes. In the room temperature C−V measurements, different from the results of MIS diode, the values of C for MS diode was observed in decreasing behaviour from ideality with crossing the certain forward bias voltage point (∼2.5 V). The decrease in the negative capacitance corresponds to the increase of G/w.

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“…Titanium dioxide (TiO 2 ) became a promising material in different applications for its excellent optical and electrical properties and chemical stability such as large band gap, high refractive index, high dielectric constant, and highly active surface [ 1 – 4 ]. Traditionally, TiO 2 pigment has almost been applied to every kind of paint due to its high refractive index [ 5 , 6 ] and used as photocatalyst in the process of sterilizing, deodorizing, antifouling, and so on, which can convert light energy into electrical energy and chemical energy [ 6 – 8 ].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, metalenses at visible wavelengths with efficiencies as high as 86% have been demonstrated recently by using TiO 2 materials, in which TiO 2 could overcome the challenge of the high intrinsic losses in the visible range and realize the highly efficient metasurfaces in this region [ 12 ]. TiO 2 has been one of the most studied materials in the last decades, and numerous research concerning TiO 2 bulks and films have been already reported [ 1 – 4 ]. However, the research on the optical properties of TiO 2 ultrathin films, especially below 20 nm, is still rare.…”

Section: Introductionmentioning

confidence: 99%

“…TiO 2 thin films can be prepared by various methods such as electron beam evaporation, laser-assisted evaporation, chemical vapor deposition, sol–gel process, sputtering, and atomic layer deposition (ALD) [ 14 ]. Among them, the ALD method has been usually adopted to grow ultrathin and high- k dielectrics owing to its advantages over other methods in completely precise thickness control, low processing temperature, low impurity content, no line-of-sight depositions, conformal coating capability on complex-shaped structures, and excellent thickness uniformity over large deposition area [ 1 , 3 , 15 – 17 ].…”

Section: Introductionmentioning

confidence: 99%

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Optical Constants and Band Gap Evolution with Phase Transition in Sub-20-nm-Thick TiO2 Films Prepared by ALD

et al. 2017

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Titanium dioxide (TiO2) ultrathin films with different thicknesses below 20 nm were grown by atomic layer deposition (ALD) on silicon substrates at 300 °C. Spectroscopic ellipsometry (SE) measurements were operated to investigate the effect of thickness on the optical properties of ultrathin films in the spectra range from 200 to 1000 nm with Forouhi–Bloomer (F-B) dispersion relation. It has been found that the refractive index and extinction coefficient of the investigated TiO2 ultrathin film increase while the band gap of TiO2 ultrathin film decreases monotonically with an increase in film thickness. Furthermore, with the purpose of studying the temperature dependence of optical properties of TiO2 ultrathin film, the samples were annealed at temperature from 400 to 900 °C in N2 atmosphere. The crystalline structure of deposited and annealed films was deduced by SE and supported by X-ray diffraction (XRD). It was revealed that the anatase TiO2 film started to transform into rutile phase when the annealing temperature was up to 800 °C. In this paper, a constructive and effective method of monitoring the phase transition in ultrathin films by SE has been proposed when the phase transition is not so obvious analyzed by XRD.

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ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

Cited by 32 publications

References 26 publications

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$ Al / PTh - SiO 2 / p - Si structure

Influence of $$\hbox {Si}_{3}\hbox {N}_{4}$$ Si 3 N 4 layer on the electrical properties of Au/n-4H SiC diodes

Optical Constants and Band Gap Evolution with Phase Transition in Sub-20-nm-Thick TiO2 Films Prepared by ALD

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