ALD preparation of high-k HfO₂ thin films with enhanced energy density and efficient electrostatic energy storage

Abstract

The energy density and energy efficiency deteriorate slightly from room temperature to 150 °C.

Improved energy storage performance of PbZrO3 antiferroelectric thin films crystallized by microwave radiation

“…[16][17][18] Besides, the W rec of AFE lms can also be improved by using special preparation methods and adjusting process parameters to obtain high-quality lms. [19][20][21][22][23] For example, an improved W rec of AFE lms was obtained by modifying chemical solution with Fig. 1 A schematic diagram for the energy storage of AFE materials.…”

All‐Solution‐Processed Van der Waals Heterostructures for Wafer‐Scale Electronics

“…In addition, the chemical composition of oxidized HfS 2 is characterized using XPS analysis. In contrast to the as‐exfoliated HfS 2 , which clearly shows S 2p doublets with negligible O 1s intensity (Figure S5, Supporting Information), the oxidized HfS 2 exhibits two O 1s peaks at 530.1 and 532.1 eV corresponding to HfO and CO bonds, [ 23 ] respectively, and negligible S 2p doublets (Figure 2g). This chemical analysis indicates that the thermal annealing process effectively converts the HfS 2 into HfO 2 .…”

Bismuth niobate thin films for dielectric energy storage applications

“…The energy densities of the BNO thin films were then compared in Figure with a number of recent reports . Since the energy densities of the plotted materials were measured and calculated under different conditions, additional information including frequencies, sample thicknesses, electrode materials, and electrode diameters are listed in Table .…”