Bismuth niobate thin films for dielectric energy storage applications

Abstract

Low-temperature processed bismuth niobate (BNO) thin films were explored in this work as a potential candidate for high-energy density capacitors. The BNO samples were fabricated by the chemical solution deposition method followed by a series of ultraviolet (UV) exposure and heat treatments. A UV treatment prior to the final pyrolysis step was found to be useful in eliminating bound carbon. Xray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) demonstrated that the residual carbon could be effectively removed at 350°C after UV exposure. Following a heat treatment at 450°C, the energy storage density of the BNO thin film reached 39 J/cm 3 with an efficiency of 72%.Furthermore, 350°C and 375°C treated BNO samples showed high-temperature stability such that the efficiencies of the films remained above 97% up to 150°C at 10 kHz under 1 MV/cm applied field. K E Y W O R D Sbismuth oxide, energy storage, lead-free ceramics, low temperature, thin films

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

“…has facilitate the medium ε with relative optimistic tanδ even lower than 10 −3 , good thermal stability, practical tenability, and nonlinear behavior. [111][112][113] Considering this, excellent energy storage performances of Bi 1.5 Zn 0.9 Nb 1.5 O 6.9 thick film grown on Pt/Ti/SiO 2 /Si wafer across a wide range of frequencies and temperatures has been reported in Suan et al's work. ESD from 46.7 to 60.8 J cm −3 has been obtained in the frequency of 100 Hz-10 kHz and good thermal stability from RT to 200 °C has been also achieved, which can be seen in Figure 15a,b.…”

“…Peculiar cubic pyrochlore phase structure with weak dipole clusters correlation in bismuth zinc niobate (BZN) thik films has facilitate the medium ε with relative optimistic tanδ even lower than 10 −3 , good thermal stability, practical tenability, and nonlinear behavior . Considering this, excellent energy storage performances of Bi 1.5 Zn 0.9 Nb 1.5 O 6.9 thick film grown on Pt/Ti/SiO 2 /Si wafer across a wide range of frequencies and temperatures has been reported in Suan et al's work.…”

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

“…These BNO films showed low values of P R ( 3 µC cm -2 ), however they achieved stored energy densities of  39 J cm -3 at room temperature, 10 kHz and with an applied electric field of 3.6 MV cm -1 , which is of interest for their use in high-energy density capacitors. [52] By the synthesis of photosensitive metal compounds in solutions, our group has attained ferroelectric oxide thin films (e.g., PTO, (Pb Ca)TiO 3 -PCT, (Bi 0.5 Na 0.5 ) 1-x Ba x TiO 3 -BNBT) at crystallization temperatures of 400 C, by a previous irradiation of the amorphous layers with an excimer UV lamp of 222 nm. [12,[62][63][64][65] III.11 COMPLEMENTARY COMBINATIONS OF LOW-TEMPERATURE CSD METHODS…”

“…1). [11,12,14,39,40,44,46, Fukushima et al, [74] and Budd et al, [75,76] were among the first that demonstrated the successful fabrication of ferroelectric oxide thin films (PbTiO 3 , Pb(Zr,Ti)O 3 , PZT and 2014 [39] 2010 [46] 2019 [40] 2017 [44] 2017 [73] 2015 [72] 2014 [11] 2020 [71] 2011 [63][64][65] 2014 [62] 2008 [68] 2010 [67] 1999 [61] 2020 [70] 2003 [69] 2004 [12] 2000 [66] 2014 [62] 2016 [58] 2008 [57] 2017 [56] 2008 [14] 2001 [60] 2013 [59] 2018 [52] 2003 [53] 2000 [54] 2009 [55] The graphic shows the ferroelectric composition of the film, the processing temperature at which they were processed and the ferroelectric remanent polarization (PR) measured in them. The CSD strategy/ies used for the low-temperature solution processing of the films are also shown.…”

Perovskite Sr1–x(Na0.5Bi0.5)xTi0.99Mn0.01O3 Thin Films with Defect Dipoles for High Energy-Storage and Electrocaloric Performance

“…Because films possess fewer defects, fewer lattice imperfections, and dense and pore-free microstructures, which can withstand higher electric fields than bulk, and thus they exhibit greater energy-storage density. According to the different polarization behavior, the representative dielectric capacitors can be classified as linear dielectric capacitors, paraelectric capacitors, ferroelectric capacitors, relaxor ferroelectric capacitors, and antiferroelectric capacitors. − Paraelectric materials have several features, such as relatively low dielectric constant, low dielectric loss, and high BDS, and are promising for energy-storage applications. − …”