ALCVD AlO/sub x/ barrier layers for magnetic tunnel junction applications

Bubber, Randhir; Mao, Ming; Schneider, Thomas; Hegde, H.; Sin, Kyusik; Funada, S.; Shi, Shengjie

doi:10.1109/tmag.2002.803163

Cited by 8 publications

(8 citation statements)

References 6 publications

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“…The large magneto-resistance (MR) measured confirms that the graphene passivation layer preserves a spin polarization for the bottom electrode following the ALD step. In contrast to unsuccessful previous studies where ALD was performed directly on top of ferromagnetic metals, 15 − 17 here we show that the graphene layer prevents the ferromagnet from oxidizing while allowing a spin-polarized current to be extracted. We obtain up to MR = ( R ap – R p )/ R ap = −31% from the device characterization presented in Figure 5 , where R p and R ap are the device resistances in the parallel and antiparallel state, respectively.…”

Section: Resultscontrasting

confidence: 95%

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

et al. 2014

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We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

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Section: Resultscontrasting

confidence: 95%

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

et al. 2014

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“…While the ALD of Al 2 O 3 is known to be an oxidative process-usually dubbed as incompatible with spintronic devices [56,57]-here the graphene was used as protection, to avoid the oxidation of the FM surface. This in turn protected the spintronics properties of the device, as demonstrated by the measurement of the large spin signals.…”

Section: Direct Integration Of Graphene In Mtj By Cvdmentioning

confidence: 99%

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Piquemal-Banci

Galceran

Martin

et al. 2017

J. Phys. D: Appl. Phys.

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“…However, for the field of MTJ in spintronics, the advantages of ALD are still not widely used. The fabrication of MTJ mostly relies on relatively complex physical deposition, although there have been some pioneering attempts [89][90][91]. A key reason is that in the process of ALD, the metallic spin sources will be oxidized, resulting in a decline in spintronic performance.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

Tsai

2022

Nanomaterials

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The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.

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ALCVD AlO/sub x/ barrier layers for magnetic tunnel junction applications

Cited by 8 publications

References 6 publications

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

2D-MTJs: introducing 2D materials in magnetic tunnel junctions

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

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