Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew E.; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

doi:10.1116/11.20121102

Cited by 29 publications

(9 citation statements)

References 17 publications

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“…We believe that this e-beam evaporated Al2O3 is amorphous as is seen in other similarly deposited samples. [5] From the CV measurement we estimate that the dielectric constant of the Al2O3 layer is 7.2 eV which is similar to values reported by other groups. [6] Interface trap analysis of the Al2O3 / hydrogenated diamond interface, correcting for series resistance of the contacts and access regions, [7] indicated good band bending efficiency [8] as shown in figure 4(a) and a higher trap density in the FET hydrogenated by an H2 environment anneal as shown in figure 4(b).…”

Section: Discussionsupporting

confidence: 77%

Charge Trapping Analysis of High Speed Diamond FETs

et al. 2017

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Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond -Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface.

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Section: Discussionsupporting

confidence: 77%

Charge Trapping Analysis of High Speed Diamond FETs

et al. 2017

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“…For the samples in this study, this referencing produces consistent results 50 . XPS spectra from bare silicon wafers, alumina deposited on silicon, zinc oxide, and zirconia have previously been reported in the scientific literature 51–54 …”

Section: Methodssupporting

confidence: 70%

A new holder/container with a porous cover for atomic layer deposition on particles, with transport analysis and detailed characterization of the resulting materials

Shah

Patel

Major

et al. 2020

Surface & Interface Analysis

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Atomic layer deposition (ALD) is widely used in the semiconductor and materials industries for depositing thin films. Here, we describe a holder/container for performing ALD on particles that does not require agitation. This device contains a broad, shallow, circular recess that holds the particles. Two different frits and combinations of stacked meshes were explored as a cover to this holder to restrict the movement of the particles while still allowing good conductance of the ALD reagent gases. A mathematical discussion of the diffusion through the frits and stacked meshes is presented. As confirmed by spectroscopic ellipsometry (SE) on planar witness silicon shards, consistent, high‐quality film growth took place inside and outside the holder. The performance of the holder was demonstrated with ~5‐μm zirconia particles that were coated with alumina from trimethylaluminum (TMA) and water, and with zinc oxide from diethylzinc (DEZ) and water. Deposition on different amounts of particles was investigated (50, 100, 200, and 500 mg). Parasitic chemical vapor deposition (CVD) appeared to be present when a greater number of particles or meshes were used. ALD coating on particles was also confirmed by X‐ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and energy‐dispersive X‐ray spectroscopy (EDS).

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“…Here, we report an XPS and ToF‐SIMS analysis of untreated and NP‐coated aluminum surfaces that were exposed for different amounts of time to the products of a fluoroalkane + oxygen plasma. As noted, NP adsorbs to native aluminum oxide through its phosphonate groups to form a corrosion inhibiting layer .…”

Section: Introductionmentioning

confidence: 99%

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Madaan

Diwan

Linford

2014

Surf. Interface Anal.

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Nitrilotris(methylene)triphosphonic acid (NP) is a technologically important molecule that has been used for years as a corrosion inhibitor and/or adhesion promoter on aluminum and other metal surfaces. However, to the best of our knowledge, the detailed surface characterization of NP adsorbed on aluminum, or on any other surface, has not been reported. Herein, we report an X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of a series of untreated and NP-coated aluminum substrates that were exposed to the downstream products of a fluoroalkane + oxygen plasma for different amounts of time (from 0 to 20 s). As indicated by P 2p, N 1s, Al 2p, O 1s, and F 1s narrow scans, even a 4-s plasma treatment significantly damages the NP protective layer and converts the native aluminum oxide into aluminum oxyfluoride. Heat treatment of the fluorine plasma-treated samples in the air substantially converts the aluminum oxyfluoride back to aluminum oxide, while similar heating under vacuum results in little change to the materials. A slow loss of fluorine from the samples occurs over the course of weeks when they are stored in the air. A ToF-SIMS analysis reveals sets of signals that are consistent with no surface treatment, NP treatment, or fluorine plasma treatment. A principal component analysis of the negative ion ToF-SIMS spectra from the samples shows the expected differentiation of the samples.

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Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Cited by 29 publications

References 17 publications

Charge Trapping Analysis of High Speed Diamond FETs

Charge Trapping Analysis of High Speed Diamond FETs

A new holder/container with a porous cover for atomic layer deposition on particles, with transport analysis and detailed characterization of the resulting materials

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

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