2009
DOI: 10.1002/adma.200803440
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Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas‐Diffusion Barriers—A Strategy for Reliable Encapsulation of Organic Electronics

Abstract: Highly efficient gas‐diffusion barriers based on nanolaminates of alternating Al2O3 and ZrO2 layers grown at 80 °C by atomic‐layer deposition are presented. Ultralow water‐vapor permeation rates are reported, and a dramatic reduction of statistical defects on larger areas was found compared to single Al2O3 layers. This study provides a concept for the encapsulation of organic optoelectronic devices.

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Cited by 276 publications
(213 citation statements)
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“…O 3 was used as an oxygen precursor. The O 3 concentration output of the generator was ~ 100 g/m 3 . Ho 2 O 3 layers were deposited at 300 °C using the ALD process based on Ho(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and O 3 [27,29].…”
Section: Methodsmentioning
confidence: 99%
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“…O 3 was used as an oxygen precursor. The O 3 concentration output of the generator was ~ 100 g/m 3 . Ho 2 O 3 layers were deposited at 300 °C using the ALD process based on Ho(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and O 3 [27,29].…”
Section: Methodsmentioning
confidence: 99%
“…The O 3 concentration output of the generator was ~ 100 g/m 3 . Ho 2 O 3 layers were deposited at 300 °C using the ALD process based on Ho(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and O 3 [27,29]. TiO 2 films were grown using an ALD process based on titanium tetra- A Sopra GES-5E variable angle spectroscopic ellipsometer was used to determine the thickness (d) and optical properties (n, k) using 'Winelli II' software.…”
Section: Methodsmentioning
confidence: 99%
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