Al-rich <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si55.svg"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Fe</mml:mtext></mml:mrow><mml:mrow><mml:mn>0.85</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si56.svg"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Al</mml:mtext></mml:mrow><mml:mrow><mml:mn>0.15</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>(1 0 0), (1 1 0) and (1 1 1) surface structures

Dai, Zongbei; Alyabyeva, Natalia; Borghetti, Patrizia; Chénot, Stéphane; David, P.; Koltsov, Alexey; Renaud, Gilles; Jupille, Jacques; Cabailh, Gregory; Lazzari, Rémi

doi:10.1016/j.apsusc.2020.145312

Cited by 4 publications

(7 citation statements)

References 39 publications

(79 reference statements)

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“…Experiments were conducted at INSP in two connected preparation and analysis ultra-high vacuum (UHV) chambers, with base pressures of 1.5 10 −10 mbar and < 1.0 10 −10 mbar, respectively. Surface composition and segregation profile 50,56,57 were analysed by XPS under Al-Kα monochromatic excitation (1486.6 eV; Phoibos 100 hemispherical analyzer from SPECS) at a pass energy of 20 eV for angles ranging from normal (Θ = 0 • ) to grazing emission (Θ = 75 • ). Structures were determined by LEED, as well as GIXD performed on the UHV chamber of the BM32 beamline of the European Synchrotron Radiation Facility 57 .…”

Section: A Experimentalmentioning

confidence: 99%

“…The same Fe 0.85 Al 0.15 (110) single crystal (diameter 6 mm; thickness 2 mm; miscut below 0.1 • ) was used for all measurements. It was cleaned in UHV via cycles of Ar + sputtering (1 keV; 30 mins) followed by annealing at 1193 K in UHV (during ∼ 15 mins at a few 10 −9 mbar) 50,56,57 , a temperature at which the Al segregation profile has reached a plateau 56 . Heating and cooling rates were around 250 K/min.…”

Section: A Experimentalmentioning

confidence: 99%

“…S2-b 45 ). Parallel assignments can be made for the O 1s spectrum, as the The larger Gaussian broadening of the metallic Al core level at grazing emission points to a distribution of E B due to segregation 50,56,57 . Keeping fixed the above core level decomposition, the Al concentration profile underneath the oxide was derived from the variation with emission angle of the I c Al 2p /I c…”

Section: A Core Level Lineshapesmentioning

confidence: 99%

“…area ratio of metallic components (Fig. S2 45 ) corrected from photoionization cross sections and analyzer transmission functions 50,56,57 (with the advantage that the neighboring Al 2p and Fe 3p E B lead to the same escape depth). A profile similar as on the bare surface 56 is found (Fig.…”

Section: F E 3pmentioning

confidence: 99%

“…Unlike bulk-terminated ordered intermetallic compounds such as D0 3 (Ni 3 Al) or B 2 (NiAl, FeAl), the bare Fe 0.85 Al 0.15 (110) surface tends to be enriched in aluminum which segregates above 700 K over a ∼ 3 nm thick region with an average composition of Fe 0.6 Al 0.4 56,57 . Therefore, the question at hand, poorly tackled in surface science, is the coupling between Al oxidation and segregation.…”

Section: Introductionmentioning

confidence: 99%

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Oxide at the Al-rich Fe0.85Al0.15(110) surface

Dai

Alyabyeva

Bossche

et al. 2020

Phys. Rev. Materials

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The formation of an ultra-thin aluminum oxide film at Fe0.85Al0.15(110) surface (A2 random alloy) has been studied by a variety of surface sensitive techniques (X-ray photoemission, low-energy electron diffraction, surface X-ray diffraction and scanning tunneling microscopy) supplemented by ab initio atomistic simulations. Since iron is not oxidized in the used conditions, the study focused on the coupling between aluminum oxidation and segregation processes. Compared to the bare surface, whose average composition (Fe0.6Al0.4) is closer to the B2-CsCl structure over a ∼ 3 nm depth, the oxidation hardly affects the subsurface segregation of aluminum. All the structural and chemical fingerprints point to an oxide film similar to that found on NiAl(110). It is a bilayer (∼ 7.5Å thick) with a composition close to Al10O13 and a large (18.8 × 10.7)Å 2 nearly rectangular unit cell; an almost perfect match between substrate periodicity and the (1 × 2) oxide supercell is found. Nevertheless, microscopy reveals the presence of anti-phase domain boundaries. Measured Al 2p and O 1s core level shifts match calculated ones; their origin and the relative contributions of initial/final state effects are discussed. The ubiquity of the present oxide on different supports asks for the origin of its stability.

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Section: A Experimentalmentioning

confidence: 99%

Section: A Experimentalmentioning

confidence: 99%

Section: A Core Level Lineshapesmentioning

confidence: 99%

Section: F E 3pmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Oxide at the Al-rich Fe0.85Al0.15(110) surface

Dai

Alyabyeva

Bossche

et al. 2020

Phys. Rev. Materials

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An In Situ and Real-Time Plasmonic Approach of Seed/Adhesion Layers: Chromium Buffer Effect at the Zinc/Alumina Interface

Messaykeh

Chénot

David

et al. 2021

Crystal Growth & Design

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The eect of additives on metal/oxide interfaces is explored in situ and in real time on evaporated lms by a combination of surface science techniques, among which a very exible optical method shows a unique ability to scrutinize the growth and wetting properties of supported clusters that involve several elements. The study focuses on Cr at the Zn/α-Al 2 O 3 (0001) interface at 300 K. A particular interest of the present interface is that Zn does not stick at all on bare alumina. The sticking and morphology of both Cr and Zn lms are analyzed from submonolayer to multilayer thicknesses, during their growth. After an initial oxidation reaction with residual OH groups, shown to be detrimental to Zn adhesion, Cr growth proceeds through the formation of high aspect ratio particles that percolate around an average thickness of 10 Å. As regards to Zn growth on a Cr deposit, two very distinct stages can be distinguished. In the submonolayer thickness range, Cr forms a seed layer that drastically increases the Zn sticking coecient from zero to nearly one due to a diusion length of physisorbed Zn adatoms before desorption larger than Cr island separation; Zn clusters are anchored on the Cr seeds that they encapsulate, but their wetting behavior is dictated by the interaction with alumina. In a second stage, as soon as the Cr lm percolates, it forms an adhesion layer on which Zn grows in a nearly 2D mode. In all cases, Cr lms are stable upon annealing. On Cr-covered alumina, the Zn desorption energy is enhanced as compared to bare surfaces which, in line with atomistic simulations, is assigned to the formation of more favorable Cr-Al 2 O 3 and Cr-Zn than Zn-Al 2 O 3 bonds. Generally speaking, the ability demonstrated herein of small amounts of additives to dramatically increase the adhesion of lms is of great practical interest. It shows that non-continuous and partially oxidized lms of additives, closer to realistic cases of application, can strongly enhance the sticking of lms. Also, anchoring a functional lm by discrete pre-deposited seeds can keep its properties intact.

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Competitive Formation of Ultra-thin Alumina Films at the Fe_0.85Al_0.15(110) Surface

et al. 2022

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Using surface sensitive techniques (photoemission, low-energy electron diffraction, and scanning tunneling microscopy), the present work reveals the competitive formation upon oxidation of two epitaxial oxide bilayer films of self-limited thickness on the surface of the ferritic random A2 body-centered alloy Fe 0.85 Al 0.15 (110). When oxidizing the substrate at 1193 K, a film (herein labeled oxide-A) similar to that studied in depth at NiAl(110) [Kresse et al., Science 2005, 308, 1440 is found. At a slightly lower annealing temperature (1073 K), alumina patches segregated from the bulk act as seeds for the growth of a new longrange ordered alumina film (oxide-B) with two domains having a ∼(23 × 23) Å 2 hexagonal rotated unit cell. While showing different anion/cation chemical environments, the two films have a Al 2 O 2.5±0.2 stoichiometry and stand on an Al-enriched subsurface with a similar ∼3 nm deep segregation profile. Most importantly, thermal treatments show that the new structure B is more stable than A. This finding conflicts with the apparent ubiquity of oxide-A that has been observed on many substrates of various symmetries and compositions. This competitive formation of ultra-thin alumina oxides questions the origin of their structural (di)similarity and the actual role of these seeds in the transition toward thicker alumina films at higher pressure.

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Al-rich Fe0.85Al0.15(1 0 0), (1 1 0) and (1 1 1) surface structures

Cited by 4 publications

References 39 publications

Oxide at the Al-rich Fe0.85Al0.15(110) surface

Oxide at the Al-rich Fe0.85Al0.15(110) surface

An In Situ and Real-Time Plasmonic Approach of Seed/Adhesion Layers: Chromium Buffer Effect at the Zinc/Alumina Interface

Competitive Formation of Ultra-thin Alumina Films at the Fe_0.85Al_0.15(110) Surface

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Al-rich Fe0.85Al0.15(1 0 0), (1 1 0) and (1 1 1) surface structures

Cited by 4 publications

References 39 publications

Oxide at the Al-rich Fe0.85Al0.15(110) surface

Oxide at the Al-rich Fe0.85Al0.15(110) surface

An In Situ and Real-Time Plasmonic Approach of Seed/Adhesion Layers: Chromium Buffer Effect at the Zinc/Alumina Interface

Competitive Formation of Ultra-thin Alumina Films at the Fe0.85Al0.15(110) Surface

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Competitive Formation of Ultra-thin Alumina Films at the Fe_0.85Al_0.15(110) Surface