Al-induced crystallization of amorphousSixGe1-x(0

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

“…The SiGe composition was uniform in the plane for each sample, which is proposed to arise from the diffusion coefficients of Si and Ge in Al being almost equal. 41,42 Figures 2(a)-2(i) show the typical growth evolution of ALILE, observed using in-situ optical microscopy during annealing. These micrographs show the back surface of the samples observed through the transparent SiO 2 substrates.…”

“…46 This phenomenon allows for the high mobility of the interfacial semiconductor atoms and thus the high v 0 for ALILE. 41 The above discussion accounts for why ALILE can provide larger SiGe grains at lower temperature compared to SPC.…”

“…These values are the highest among the low temperature synthesized SGOIs. [16][17][18][19][36][37][38][39][40][41] The electrical properties of the Si 1-x Ge x layers were evaluated using Hall measurements with the Van der Pauw method. The sample of each composition was formed at three annealing temperatures.…”

“…21,22,34 Several attempts have been made to fabricate high-quality SiGe alloys through MILE. [36][37][38][39][40][41] Large-grained ($10 lm), preferentially (111)-oriented SGOIs were achieved when the Si or Ge compositions were low ( 20%); however, the grain size and (111)-orientation fraction deteriorated as SiGe approached intermediate compositions. 38,40 Very recently, we fabricated highly (111)-oriented Si 0.4 Ge 0.6 using Al-induced layer exchange (ALILE) by tuning the growth conditions, that is, growth temperature, thicknesses of Al and SiGe layers, and interlayer thickness between SiGe and Al.…”

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

“…In these studies, co-existence of either poly-Si or poly-Ge with the desired poly-SiGe thin film has been reported [9,[11][12][13][14]. Such phase segregation of poly-Si or poly-Ge phases can be largely impeded by using a pre-formed amorphous (a)-SiGe phase in the a-SiGe/Al bilayer structure [15,16] and are extensively reported in literature [17,18]. Yet some of the issues germane to crystallization kinetics of AIC in the ternary system (Al, Si and Ge) with a-SiGe/Al bilayer structure has not been explored adequately.…”