Al-implantation induced damage in 4H-SiC

Kumar, P.; Martins, M.I.M.; Bathen, M.E.; Prokscha, T.; Grossner, U.

doi:10.1016/j.mssp.2024.108241

Cited by 2 publications

(1 citation statement)

References 36 publications

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“…© 2024 The Japan Society of Applied Physics implantation into SiC introduced various deep levels not only inside the implanted region but also in a 1-2 μm deep region. 57) Thus, the dependences of defect generation on the implantation and annealing conditions must be also investigated as the future work.…”

Section: -8mentioning

confidence: 99%

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

Fujii,

Kaneko,

Kimoto

2024

Jpn. J. Appl. Phys.

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Depth profiles of deep levels in the tail region of Al ion implantation in n-type 4H-SiC were investigated by deep level transient spectroscopy measurements. Deep levels energetically located at Ec – 0.55 eV, Ec – 0.64 eV, and Ec – 1.50 eV (Ec : conduction band bottom) are generated in the tail region by the implantation and subsequent activation annealing at 1750oC for 20 min. The densities of these defects were approximately 20–40 times lower than the implanted Al atom density, and the densities of these defects and Al atoms exhibited an exponential decay along the depth direction with a decay length of 140–190 nm. Another deep level located at Ec – 1.30 eV was detected in the tail region and the density of this trap decreased more rapidly with a decay length of 62 nm. The origins of the observed deep levels are discussed based on several experimental results.

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Section: -8mentioning

confidence: 99%

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

Fujii,

Kaneko,

Kimoto

2024

Jpn. J. Appl. Phys.

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Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

Kumar,

Bathen,

Martins

et al. 2024

Journal of Applied Physics

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In this work, we have performed a detailed study of the defects created in the bulk of 4H-SiC after thermal oxidation and post oxidation annealing using deep level transient spectroscopy and minority carrier transient spectroscopy (MCTS). The study reveals the formation of several shallow and deep level majority carrier traps in the bandgap. The ON1 (EC−0.85 eV), ON2a (EC−1.05 eV), and ON2b (Ec−1.17 eV) levels are the most dominant and are observed across all the samples (EC denotes the conduction band edge). Three shallow levels Ti(k) (EC−0.17 eV), E0.23 (EC−0.23 eV), and C1/2 (EC−0.36/0.39 eV) are observed in the samples. For most of the majority carrier defects, the highest concentration is observed after an NO anneal at 1300°C. This behavior is sustained in the depth profile measurements where the defect concentration after the NO anneal at 1300°C is significantly higher than for the rest of the samples. The origin of most of the majority carrier defects has been attributed to C interstitial injection from the interface during thermal oxidation and annealing. MCTS measurements reveal two prominent minority carrier traps, labeled O0.17 (EV+0.17 eV) and B (EV+0.28 eV), where the concentration of O0.17 is independent of annealing parameters while the concentration of the B level increases after the NO anneal (EV denotes the valence band edge). Furthermore, the depth profiles of the defects are used to evaluate their diffusion parameters by solving the diffusion equation to fit the experimental profiles. The defect concentrations decay exponentially with depth, which evidences that the defects were created at or near the SiO2–SiC interface and migrate toward the bulk during oxidation and post-oxidation annealing.

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Al-implantation induced damage in 4H-SiC

Cited by 2 publications

References 36 publications

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC

Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC

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