Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC
Haruki Fujii,
Mitsuaki Kaneko,
Tsunenobu Kimoto
Abstract:Depth profiles of deep levels in the tail region of Al ion implantation in n-type 4H-SiC were investigated by deep level transient spectroscopy measurements. Deep levels energetically located at Ec – 0.55 eV, Ec – 0.64 eV, and Ec – 1.50 eV (Ec : conduction band bottom) are generated in the tail region by the implantation and subsequent activation annealing at 1750oC for 20 min. The densities of these defects were approximately 20–40 times lower than the implanted Al atom density, and the densities of these def… Show more
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