Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics

critical parameter for almost all applications involving photon absorption or emission, such as solar cells, solid-state lighting, detectors, displays, sensors, lasers and photocatalytic reactions. In solar cells, only photon energies close to the bandgap energy can be converted into electricity: higher-energy photons lose energy by thermalization and phonon generation, whereas lower-energy photons are simply transmitted through the solar cell. Thus, efficient solar cells require the combined use of multiple semiconductors with various bandgaps. Multicolour or multiwavelength photodetectors and on-chip spectrometers would be enabled by semic onductors with a larger range of bandgaps. In solid-state lighting, illumination and displays, direct red-green-blue (RGB) or multicolour emission is desired to achieve, in the long term, high efficiency and low-cost fabrication. This requires semi conductors with bandgaps in the range 1.77-3.1 eV. For solid-state lighting, it is still impossible to realize all-semiconductor white light-emitting diodes (LEDs) from a single mono lithic semiconductor to enable light sources with high luminosity and long lifetimes. The conventional approaches still use non-semiconductor phosphors combined with a semiconductor emitter for the generation of white light, which results in inefficient and low-quality lighting.

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“…Some recent reviews provide extensive discussions of nanowires of InGaN (REFS 20,21) and AlGaN (REF. 22) alloys.…”

Section: Iii-v Nanowires On Si Substratesmentioning

confidence: 99%

Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

2017

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“…A wide range of techniques have been explored to synthesize AlGaN ternary nanowires (including AlN nanowires). The detailed growth studies can be found in a number of review papers [15,30,32,34]. In what follows, we briefly discuss the major synthesis techniques for AlGaN ternary nanowires.…”

Section: A Brief Overview Of Synthesis Techniquesmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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“…As a whole, it appears that the peculiar morphology of NWs is favouring specific n-type and p-type dopant incorporation mechanisms as well as p-type doping efficiency, and opens the path to the realization of efficient 4 devices in the UV emission range. As a matter of fact, the realization of NW-based UV LEDs has been reported by Z. Mi and co-workers 10 , including the realization of an AlN NW-based device 11 .…”

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confidence: 96%

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

et al. 2019

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Efficient, mercury-free deep ultraviolet (DUV) light emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p -doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN NWs.Optimal electrical activation of acceptor impurities has been further achieved by electron irradiation, resulting in tunnel conduction through the AlN NW p-n junction. The proposed theoretical scenario to account for enhanced Mg incorporation involves an easy ionization of In-

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Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics

Cited by 11 publications

References 114 publications

Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

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