Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems

Hirohata, Kento; Nishi, Yasutaka; Tsukamoto, Naoki; Oka, Nobuto; Satô, Yasushi; Yamamoto, Isao; Shigesato, Yuzo

doi:10.1016/j.tsf.2009.09.177

Cited by 33 publications

(12 citation statements)

References 11 publications

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“…Zn has a higher sputtering yield 24 so the sputtering yield of Zn is expected to be higher than that of Al. 26 Thus, these results correspond to a lower resputtering rate of ZnO on the growing film surface at room temperature. This corresponds to the difference in the deposition rate between Ar and Kr or Xe, where the deposition rates for the films deposited with Kr or Xe are two to three times lower than that for Ar.…”

Section: Discussionmentioning

confidence: 68%

Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

Satô

Ishihara

Oka

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Spatial resistivity distribution of transparent conducting impurity-doped ZnO thin films deposited on substrates by dc magnetron sputtering J. Vac. Sci. Technol. A 28, 842 (2010); 10.1116/1.3357284Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based lightemitting diodes Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature Spatial distribution of electrical properties of Al-doped ZnO ͑AZO͒ films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage.

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Section: Discussionmentioning

confidence: 68%

Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

Satô

Ishihara

Oka

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

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“…This leads to the fact that the oxidation state of the sputtering targets is changed. In order to exclude this phenomenon, it is necessary to control the oxygen partial pressure, for example, by measuring the plasma composition by optical emission spectroscopy and controlling the oxygen flow rate by feedback control system [18]. Figure 2 presents XRD patterns of NiO/YSZ films with NiO content of 36, 45 and 62 vol.%.…”

Section: Resultsmentioning

confidence: 99%

Solid oxide fuel cell anode surface modification by magnetron sputtering of NiO/YSZ thin film

Solovyev

Шипилова

Ионов

et al. 2017

J. Phys.: Conf. Ser.

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IntroductionA ceramic-metal (cermet) composite of Ni and yttria-stabilized zirconia (YSZ) is the most common anode material of solid oxide fuel cells (SOFC) operating at a temperature of 800-1000 °C. However, the desire to create a commercial SOFC requires to mitigate the problem, associated with a high operating temperature. In turn, the lower operating temperature would increase polarization of electrodes and ohmic resistance of electrolyte. The ohmic resistance can be decreased either by using ultra-thin electrolytes, or new materials with higher ionic conductivity at lower temperatures [1,2]. Polarization losses of the anode can be reduced by creating new alternative materials or by nanostructuring commonly used 4]. The second approach seems to be the most promising for improving the SOFC characteristics. First, conventional NiO/YSZ cermet is cheaper than other materials, chemically stable in a reducing atmosphere at high temperatures and has thermal expansion coefficient close to that of YSZ electrolyte [5]. Second, it is known that the electrochemical reaction at the anode occurs at a three-phase boundary (TPB), the area of contact between the metal, the electrolyte and the working gas. Therefore, the electrode reaction rate and, hence, its efficiency is determined by the TPB length. The formation of nanoporous anode structure will significantly increase the TPB length. At that, the nanostructuring of the whole anode substrate is not required, since the coarse anode facilitates the rapid diffusion of fuel gas to the active reaction area and removal of reaction products out from the anode [6]. Formation of the nanostructured anode functional layer

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“…Recently, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films have been widely investigated as substitutes for ITO films due to their relatively low cost, abundance, and non-toxicity [2,3]. Among these two elements, Ga is considered to be the most promising since the covalent bonding length of GaO is more similar to ZnO compared to Al, which may induce less deformation.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Ag interlayer on the structural, optical, and electrical properties of ZTO/Ag/ ZTO films

Gong¹,

Moon²,

Kim³

2016

Transactions on Electrical and Electronic Materials

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ZnSnO 3 (ZTO)/Ag/ ZnSnO 3 (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10 -2 Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films.The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

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Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems

Cited by 33 publications

References 11 publications

Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

Solid oxide fuel cell anode surface modification by magnetron sputtering of NiO/YSZ thin film

Influence of the Ag interlayer on the structural, optical, and electrical properties of ZTO/Ag/ ZTO films

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