Air-Stable, Large-Area 2D Metals and Semiconductors

Dong, Chengye; Lu, Li-Syuan; Lin, Yu-Chuan; Robinson, Joshua A.

doi:10.1021/acsnanoscienceau.3c00047

Cited by 3 publications

(1 citation statement)

References 126 publications

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“…This bizarre structure gives PdSe 2 some special properties, such as excellent mechanical flexibility, superior electrical conductivity, and unique optical properties, exhibiting great potential in the field of flexible electronics and optoelectronics. The PdSe 2 not only has excellent air stability but also has a higher mobility than some other 2D materials. − In addition, its band gap can alter from 1.3 eV in a single layer to 0 eV in bulk . This special property triggers extensive research in broad-spectrum PD.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure

Chen,

Ke,

et al. 2024

ACS Appl. Mater. Interfaces

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As a two-dimensional (2D) material, palladium diselenide (PdSe 2 ) has attracted extensive research attention due to its unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential in electronic, optoelectronic, and other application fields. Thinner PdSe 2 exhibits semiconductor properties, while the photoresponse of the photodetectors based on this film is weaker. Although increasing the thickness of the PdSe 2 film can improve the photoresponse, thicker PdSe 2 exhibits metallic-like properties, which is not conducive to the formation of the heterojunction. In this work, a PdSe 2 2D material with a quantum island structure is prepared by a simple thermal-assisted conversion method. A new type of photodetector with a PdSe 2 /n − -Si/n + -Si vertical PIN-like structure is innovatively proposed. Broad spectral absorption from 532 to 2200 nm and a high rectification ratio (10 6 ) of the device are achieved. The introduced n − -Si layer concentrates the electric field in the depletion region, thereby shortening the transit time and accelerating the separation and collection of the carriers, resulting in the enhancement of the responsivity and 3 dB frequency compared to the traditional device with a PN structure. A recorded highest 3 dB frequency of ∼25 kHz is achieved for the PdSe 2 2D-3D PIN-like device.

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Section: Introductionmentioning

confidence: 99%

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure

Chen,

Ke,

et al. 2024

ACS Appl. Mater. Interfaces

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Friends not Foes: Exfoliation of Non-van der Waals Materials

Yang,

Schoop

2024

Acc. Chem. Res.

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Metrics & MoreArticle Recommendations CONSPECTUS: Two-dimensional materials have been a focus of study for decades, resulting in the development of a library of nanosheets made by a variety of methods. However, many of these atomically thin materials are exfoliated from van der Waals (vdW) compounds, which inherently have weaker bonding between layers in the bulk crystal. Even though there are diverse properties and structures within this class of compounds, it would behoove the community to look beyond these compounds toward the exfoliation of non-vdW compounds as well. A particular class of non-vdW compounds that may be amenable to exfoliation are the ionically bonded layered materials, which are structurally similar to vdW compounds but have alkali ions intercalated between the layers. Although initially they may have been more difficult to exfoliate due to a lack of methodology beyond mechanical exfoliation, many synthesis techniques have been developed that have been used successfully in exfoliating non-vdW materials. In fact, as we will show, in some cases it has even proven to be advantageous to start the exfoliation from a non-vdW compound.The method we will highlight here is chemical exfoliation, which has developed significantly and is better understood mechanistically compared to when it was first conceived. Encompassing many methods, such as acid/base reactions, solvent reactions, and oxidative extractions, chemical exfoliation can be tailored to the delamination of non-vdW materials, which opens up many more possibilities of compounds to study. In addition, beginning with intercalated analogues of vdW materials can even lead to more consistent and higher quality results, overcoming some challenges associated with chemical exfoliation in general. To exemplify this, we will discuss our group's work on the synthesis of a 1T'-WS 2 monolayer ink. By starting with K 0.5 WS 2 , the exfoliated 1T'-WS 2 nanosheets obtained were larger and more uniform in thickness than those from previous syntheses beginning with vdW materials. The crystallinity of the nanosheets was high enough that films made from this ink were superconducting. We will also show how soft chemical methods can be used to make new phases from existing compounds, such as H x CrS 2 from NaCrS 2 . This material was found to have alternating amorphous and crystalline layers. Its biphasic structure improved the material's performance as a battery electrode, enabling reversible Cr redox and faster Na-ion diffusion. From these and other examples, we will see how chemical exfoliation of non-vdW materials compares to other methods, as well as how this technique can be further extended to known compounds that can be deintercalated electrochemically and to quasi-one-dimensional crystals.

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Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Chen,

Sun,

Torsi

et al. 2024

Nat Commun

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Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (<250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.

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Air-Stable, Large-Area 2D Metals and Semiconductors

Cited by 3 publications

References 126 publications

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure

Friends not Foes: Exfoliation of Non-van der Waals Materials

Tailoring amorphous boron nitride for high-performance two-dimensional electronics

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Air-Stable, Large-Area 2D Metals and Semiconductors

Cited by 3 publications

References 126 publications

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure

Friends not Foes: Exfoliation of Non-van der Waals Materials

Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Contact Info

Product

Resources

About

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure

High-Speed Self-Powered PdSe₂/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe₂ Quantum Island Structure